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IS64C1024L-15TA3 PDF预览

IS64C1024L-15TA3

更新时间: 2024-01-20 10:19:16
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 46K
描述
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, TSOP1-32

IS64C1024L-15TA3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1-32针数:32
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.87
最长访问时间:15 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

IS64C1024L-15TA3 数据手册

 浏览型号IS64C1024L-15TA3的Datasheet PDF文件第2页浏览型号IS64C1024L-15TA3的Datasheet PDF文件第3页浏览型号IS64C1024L-15TA3的Datasheet PDF文件第4页浏览型号IS64C1024L-15TA3的Datasheet PDF文件第5页浏览型号IS64C1024L-15TA3的Datasheet PDF文件第6页浏览型号IS64C1024L-15TA3的Datasheet PDF文件第7页 
®
IS64C1024L  
ISSI  
ADVANCED INFORMATION  
JANUARY 2003  
128K x 8 HIGH-SPEED  
CMOS STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS64C1024L is a very high-speed, low power,  
131,072-word by 8-bit CMOS static RAMs. It is fabricated  
using ISSI's high-performance CMOS technology. This  
highly reliable process coupled with innovative circuit  
design techniques, yields higher performance and low  
powerconsumptiondevices.  
• High-speed access time: 15 ns  
Low active and standby power  
• Output Enable (OE) and two Chip Enable  
(CE1 and CE2) inputs for ease in applications  
• Fully static operation: no clock or refresh  
required  
WhenCE1isHIGHorCE2isLOW(deselected),thedevice  
assumes a standby mode at which the power dissipation  
can be reduced by using CMOS input levels.  
• TTL compatible inputs and outputs  
• Single 5V (±10%) power supply  
• Temperature offerings:  
Easy memory expansion is provided by using two Chip  
Enableinputs,CE1andCE2.TheactiveLOWWriteEnable  
(WE) controls both writing and reading of the memory.  
Option A1: -40oC to +85oC  
Option A2: -40oC to +105oC  
Option A3: -40oC to +125oC  
The IS64C1024L is available in the following 32-pin  
packages: 300-mil and 400-mil SOJ, and TSOP (Type I,  
8x20).  
FUNCTIONAL BLOCK DIAGRAM  
512 x 2048  
MEMORY ARRAY  
A0-A16  
DECODER  
VDD  
GND  
I/O  
DATA  
CIRCUIT  
COLUMN I/O  
I/O0-I/O7  
CE1  
CONTROL  
CIRCUIT  
CE2  
OE  
WE  
1024 BLK.eps  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability  
arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany  
publishedinformationandbeforeplacingordersforproducts.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
1
AdvancedInformation Rev.00A  
01/22/03  

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