5秒后页面跳转
捷配首页

Datasheet > 存储 > SRAM> IS61S6432-5TQI
IS61S6432-5TQI PDF预览

IS61S6432-5TQI

更新时间： 2024-01-09 04:32:38
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
19页 141K
描述
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM

阅读下载

中文翻译

获取价格

IS61S6432-5TQI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP, QFP100,.63X.87
针数：100Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.55最长访问时间：5 ns
其他特性：SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE最大时钟频率 (fCLK)：100 MHz
I/O 类型：COMMONJESD-30 代码：R-PQFP-G100
JESD-609代码：e0长度：20 mm
内存密度：2097152 bit内存集成电路类型：CACHE SRAM
内存宽度：32功能数量：1
端子数量：100字数：65536 words
字数代码：64000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：64KX32输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
电源：3.3 V认证状态：Not Qualified
座面最大高度：1.6 mm最大待机电流：0.01 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.185 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD宽度：14 mm
Base Number Matches：1

IS61S6432-5TQI 数据手册

 浏览型号IS61S6432-5TQI的Datasheet PDF文件第2页浏览型号IS61S6432-5TQI的Datasheet PDF文件第3页浏览型号IS61S6432-5TQI的Datasheet PDF文件第4页浏览型号IS61S6432-5TQI的Datasheet PDF文件第5页浏览型号IS61S6432-5TQI的Datasheet PDF文件第6页浏览型号IS61S6432-5TQI的Datasheet PDF文件第7页 
®
IS61S6432  
64K x 32 SYNCHRONOUS  
PIPELINE STATIC RAM  
ISSI  
JUNE 2001  
FEATURES  
DESCRIPTION  
The ISSI IS61S6432 is a high-speed, low-power  
synchronous static RAM designed to provide a burstable,  
high-performance, secondary cache for the Pentium™,  
680X0™, and PowerPC™ microprocessors. It is organized  
as 65,536 words by 32 bits, fabricated withISSI'sadvanced  
CMOS technology. The device integrates a 2-bit burst  
counter, high-speed SRAM core, and high-drive capability  
outputs into a single monolithic circuit. All synchronous  
inputs pass through registers controlled by a positive-edge-  
triggered single clock input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Pentium™ or linear burst sequence control using  
MODE input  
• Three chip enables for simple depth expansion  
and address pipelining  
• Common data inputs and data outputs  
• Power-down control by ZZ input  
• JEDEC 100-Pin TQFP and PQFP package  
• Single +3.3V power supply  
Write cycles are internally self-timed and are initiated by the  
rising edge of the clock input. Write cycles can be from one  
to four bytes wide as controlled by the write control inputs.  
Separate byte enables allow individual bytes to be written.  
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3  
controls DQ17-DQ24, BW4 controls DQ25-DQ32,  
conditionedbyBWEbeingLOW.ALOWonGWinputwould  
cause all bytes to be written.  
• Two Clock enables and one Clock disable to  
eliminate multiple bank bus contention  
• Control pins mode upon power-up:  
– MODE in interleave burst mode  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
input pins. Subsequent burst addresses can be generated  
internally by the IS61S6432 and controlled by the ADV  
(burst address advance) input pin.  
– ZZ in normal operation mode  
These control pins can be connected to GNDQ  
or VCCQ to alter their power-up state  
• Industrial temperature available  
Asynchronous signals include output enable (OE), sleep  
modeinput(ZZ),clock(CLK)andburstmodeinput(MODE).  
A HIGH input on the ZZ pin puts the SRAM in the power-  
down state. When ZZ is pulled LOW (or no connect), the  
SRAM normally operates after three cycles of the wake-up  
period. A LOW input, i.e., GNDQ, on MODE pin selects  
LINEARBurst. AVCCQ (ornoconnect)onMODEpinselects  
INTERLEAVED Burst.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-200(1)  
-166  
5
-133  
5
-117  
5
-5  
5
-6  
6
-7  
7
-8  
8
Unit  
ns  
CLK Access Time  
Cycle Time  
4
5
tKC  
6
7.5  
133  
8.5  
117  
10  
100  
12  
83  
13  
75  
15  
66  
ns  
—
Frequency  
200  
166  
MHz  
Note:  
1. ADVANCE INFORMATION ONLY.  
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any  
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.  
Integrated Silicon Solution, Inc. • 1-800-379-4774  
Rev. B  
1
06/28/01  
1234567...19

中文翻译

下载PDF

与IS61S6432-5TQI相关器件

型号 品牌 获取价格 描述 数据表
IS61S6432-5TQ-TR ISSI

获取价格

 		Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, TQFP-100
IS61S6432-6PQ ISSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6PQ ICSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6PQI ICSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6PQI ISSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6TQ ISSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6TQ ICSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6TQI ICSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-6TQI ISSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
IS61S6432-7PQ ISSI

获取价格

 		64K x 32 SYNCHRONOUS PIPELINE STATIC RAM

与IS61S6432-5TQI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证