Datasheet > IS61QDPB451236-400M3LI

IS61QDPB451236-400M3LI

更新时间： 2024-01-25 16:55:02

品牌	Logo	应用领域
美国芯成 - ISSI		时钟静态存储器内存集成电路
页数	文件大小	规格书
33页	540K
描述
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165

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IS61QDPB451236-400M3LI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA, BGA165,11X15,40	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.19
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	400 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	17 mm	内存密度：	18874368 bit
内存集成电路类型：	QDR SRAM	内存宽度：	36
功能数量：	1	端子数量：	165
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	512KX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LBGA	封装等效代码：	BGA165,11X15,40
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
电源：	1.5/1.8,1.8 V	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大待机电流：	0.32 A
最小待机电流：	1.7 V	子类别：	SRAMs
最大压摆率：	1 mA	最大供电电压 (Vsup)：	1.89 V
最小供电电压 (Vsup)：	1.71 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	TIN SILVER COPPER
端子形式：	BALL	端子节距：	1 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
宽度：	15 mm	Base Number Matches：	1

IS61QDPB451236-400M3LI 数据手册

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IS61QDPB41M18A

IS61QDPB451236A

1Mx18, 512Kx36

18Mb QUAD-P (Burst 4) SYNCHRONOUS SRAM

ADVANCED INFORMATION

SEPTEMBER 2010

(2.5 Cycle Read Latency)

FEATURES

DESCRIPTION

The 18Mb IS61QDPB451236 and IS61QDPB41M18 are

synchronous, high-performance CMOS static random access

memory (SRAM) devices. These SRAMs have separate I/Os,

eliminating the need for high-speed bus turnaround. The

rising edge of K clock initiates the read/write operation, and

all internal operations are self-timed. Refer to the Timing

Reference Diagram for Truth Table for a description of the

basic operations of these QUAD-P (Burst of 4) SRAMs. Read

and write addresses are registered on alternating rising

edges of the K clock. Reads and writes are performed in

double data rate.



512Kx36 and 1Mx18 configuration available.

On-chip delay-locked loop (DLL) for wide data valid

window.



Separate read and write ports with concurrent read

and write operations.



Synchronous pipeline read with late write operation.

Double data rate (DDR) interface for read and write

input ports.



2.5 cycle read latency.

Fixed 4-bit burst for read and write operations.

Clock stop support.

The following are registered internally on the rising edge of

the K clock:

Two input clocks (K and K#) for address and control

registering at rising edges only.



Read/write address



Two echo clocks (CQ and CQ#) that are delivered

simultaneously with data.

Read enable

Write enable



Data Valid Pin (QVLD).

Byte writes for burst addresses 1 and 3

Data-in for burst addresses 1 and 3

+1.8V core power supply and 1.5, 1.8V VDDQ, used

with 0.75, 0.9V VREF.

The following are registered on the rising edge of the K#

clock:



HSTL input and output levels.



Byte writes for burst addresses 2 and 4

Registered addresses, write and read controls, byte

writes, data in, and data outputs.



Data-in for burst addresses 2 and 4



Full data coherency.

Byte writes can change with the corresponding data-in to

enable or disable writes on a per-byte basis. An internal write

buffer enables the data-ins to be registered one cycle after

the write address. The first data-in burst is clocked one cycle

later than the write command signal, and the second burst is

timed to the following rising edge of the K# clock. Two full

clock cycles are required to complete a write operation.

Boundary scan using limited set of JTAG 1149.1

functions.



Byte write capability.

Fine ball grid array (FBGA) package:

13mmx15mm and 15mmx17mm body size

165-ball (11 x 15) array

Programmable impedance output drivers via 5x

user-supplied precision resistor.



During the burst read operation, the data-outs from the first

and third bursts are updated from output registers of the third

and fourth rising edges of the K# clock (starting 2.5 cycles

later after read command). The data-outs from the second

and fourth bursts are updated with the fourth and fifth rising

edges of the K clock where the read command receives at

the first rising edge of K. Two full clock cycles are required to

complete a read operation.

ODT(On-Die Termination) feature is supported

optionally on Input clocks, Data input, and Control

signals.

The device is operated with a single +1.8V power supply

and is compatible with HSTL I/O interfaces.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.- www.issi.com

Rev. 00A

5/12/2010

12 3 4 5 6 7...33

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与IS61QDPB451236-400M3LI相关器件

型号	品牌	获取价格	描述	数据表
IS61QDPB451236-450M3	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
IS61QDPB451236-450M3I	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
IS61QDPB451236-450M3LI	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165
IS61QDPB451236-500M3	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
IS61QDPB451236-500M3LI	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165
IS61QDPB451236-550M3	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
IS61QDPB451236A	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDPB451236A1	ISSI	获取价格	512Kx36 and 1Mx18 configuration available
IS61QDPB451236A1-550B3	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165
IS61QDPB451236A1-550B3I	ISSI	获取价格	QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165

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