Datasheet > IS42S16100C1_07

IS42S16100C1_07

更新时间： 2024-02-26 18:56:44

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
81页	913K
描述
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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数据手册

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IS42S16100C1_07 数据手册

IS42S16100C1

512K Words x 16 Bits x 2 Banks (16-MBIT)

SYNCHRONOUS DYNAMIC RAM

ISSI

NOVEMBER 2006

FEATURES

DESCRIPTION

• Clock frequency: 200, 166, 143 MHz

ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is

organized as a 524,288-word x 16-bit x 2-bank for

improvedperformance. ThesynchronousDRAMs

achieve high-speed data transfer using pipeline

architecture. All inputs and outputs signals refer to the

rising edge of the clock input.

• Fully synchronous; all signals referenced to a

positive clock edge

• Two banks can be operated simultaneously and

independently

• Dual internal bank controlled by A11

(bank select)

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

• Single 3.3V power supply

• LVTTL interface

VDD

DQ0

DQ1

GNDQ

DQ2

DQ3

VDDQ

DQ4

DQ5

GNDQ

DQ6

DQ7

VDDQ

LDQM

GND

DQ15

IDQ14

GNDQ

DQ13

DQ12

VDDQ

DQ11

DQ10

GNDQ

DQ9

DQ8

VDDQ

UDQM

CLK

CKE

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence:

Sequential/Interleave

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write

operations capability

CAS

RAS

• Burst termination by burst stop and

precharge command

A11

A10

• Byte controlled by LDQM and UDQM

• Industrial temperature up to 143 MHz

• Packages 400-mil 50-pin TSOP-II, 60-ball fBGA

• Lead-free package option

VDD

GND

PIN DESCRIPTIONS

CAS

ColumnAddressStrobeCommand

WriteEnable

A0-A11

A0-A10

A11

Address Input

Row Address Input

Bank Select Address

Column Address Input

DataDQ

LDQM

UDQM

VDD

Lower Bye, Input/Output Mask

Upper Bye, Input/Output Mask

Power

A0-A7

DQ0 to DQ15

CLK

GND

VDDQ

GNDQ

Ground

System Clock Input

Clock Enable

Power Supply for DQ Pin

Ground for DQ Pin

NoConnection

CKE

Chip Select

RAS

RowAddressStrobeCommand

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. D

11/03/06

12 3 4 5 6 7...81

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与IS42S16100C1_07相关器件

型号	品牌	获取价格	描述	数据表
IS42S16100C1-5T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-5TL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-6TL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7B	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7BI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7BL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7BLI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1-7TI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

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