Datasheet > IS42S16100E

IS42S16100E

更新时间： 2024-02-04 23:56:34

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
82页	1535K
描述
512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM

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中文翻译

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数据手册

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IS42S16100E 数据手册

IS42S16100E

IS45S16100E

512K Words x 16 Bits x 2 Banks

16Mb SYNCHRONOUS DYNAMIC RAM

SEPTEMBER 2009

FEATURES

•ꢀ Clock frequency: 200, 166, 143 MHz

DESCRIPTION

ISSI’sꢀ16MbꢀSynchronousꢀDRAMꢀIS42/4516100Eꢀisꢀ

organizedꢀasꢀaꢀ524,288-wordꢀxꢀ16-bitꢀxꢀ2-bankꢀforꢀ

improvedꢀperformance.ꢀTheꢀsynchronousꢀDRAMsꢀ

achieve high-speed data transfer using pipeline

architecture. All inputs and outputs signals refer to the

rising edge of the clock input.

•ꢀ Fullyꢀsynchronous;ꢀallꢀsignalsꢀreferencedꢀtoꢀaꢀ

positive clock edge

•ꢀ Twoꢀbanksꢀcanꢀbeꢀoperatedꢀsimultaneouslyꢀandꢀ

independently

•ꢀ DualꢀinternalꢀbankꢀcontrolledꢀbyꢀA11ꢀ(bankꢀselect)

•ꢀ Singleꢀ3.3Vꢀpowerꢀsupply

•ꢀ LVTTLꢀinterface

•ꢀ Programmableꢀburstꢀlengthꢀ

–ꢀ(1,ꢀ2,ꢀ4,ꢀ8,ꢀfullꢀpage)

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

VDD

DQ0

DQ1

GNDQ

DQ2

DQ3

VDDQ

DQ4

DQ5

GNDQ

DQ6

DQ7ꢀ

VDDQ

LDQM

CAS

RAS

A11

A10

GND

DQ15

DQ14

GNDQ

DQ13

DQ12

VDDQ

DQ11

DQ10

GNDQ

DQ9

DQ8

VDDQ

UDQM

CLK

CKE

•ꢀ Programmableꢀburstꢀsequence:ꢀ

Sequential/Interleave

•ꢀ 2048ꢀrefreshꢀcyclesꢀeveryꢀ32msꢀ(Com,ꢀInd,ꢀA1ꢀ

grade)ꢀorꢀ16msꢀ(A2ꢀgrade)

•ꢀ Randomꢀcolumnꢀaddressꢀeveryꢀclockꢀcycle

•ꢀ ProgrammableꢀCASꢀlatencyꢀ(2,ꢀ3ꢀclocks)

•ꢀ Burstꢀread/writeꢀandꢀburstꢀread/singleꢀwriteꢀ

operations capability

•ꢀ Burstꢀterminationꢀbyꢀburstꢀstopꢀandꢀ

precharge command

•ꢀ ByteꢀcontrolledꢀbyꢀLDQMꢀandꢀUDQM

•ꢀ Packages:ꢀ400-milꢀ50-pinꢀTSOP-IIꢀandꢀ60-ballꢀ

TF-BGA

•ꢀ TemperatureꢀGrades:

Commercialꢀ(0^oC to +70^oC)

Industrialꢀ(-40^oCꢀtoꢀ+85^oC)

ꢀꢀꢀꢀAutomotiveꢀA1ꢀ(-40^oCꢀtoꢀ+85^oC)

ꢀꢀꢀꢀAutomotiveꢀA2ꢀ(-40^oCꢀtoꢀ+105^oC)

VDD

GND

PIN DESCRIPTIONS

CAS

Column Address Strobe Command

A0-A10 ꢀ

RowꢀAddressꢀInput

BankꢀSelectꢀAddress

Column Address Input

DataꢀDQ

WEꢀ

WriteꢀEnable

A11ꢀꢀ

ꢀ

LDQMꢀ LowerꢀBye,ꢀInput/OutputꢀMask

UDQMꢀ UpperꢀBye,ꢀInput/OutputꢀMask

A0-A7

DQ0ꢀtoꢀDQ15ꢀ

VDDꢀ

GNDꢀ

Power

CLKꢀ

CKEꢀ

ꢀ

SystemꢀClockꢀInput

ClockꢀEnable

Ground

VDDQꢀ PowerꢀSupplyꢀforꢀDQꢀPin

GNDQꢀ GroundꢀforꢀDQꢀPin

Chip Select

RASꢀ

ꢀ

RowꢀAddress Strobe Command

NCꢀ

NoꢀConnection

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device speciﬁcation before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com

Rev. D

08/24/09

12 3 4 5 6 7...82

中文翻译

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与IS42S16100E相关器件

型号	品牌	获取价格	描述	数据表
IS42S16100E-5B	ISSI	获取价格	Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, BGA-60
IS42S16100E-5BL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E-5BL-TR	ISSI	获取价格	DRAM
IS42S16100E-5T	ISSI	获取价格	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E-5TL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E-5T-TR	ISSI	获取价格	暂无描述
IS42S16100E-6B	ISSI	获取价格	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60, 10.10 X 6.40 MM, 0.65 MM PITCH, BGA-60
IS42S16100E-6BL	ISSI	获取价格	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E-6BLI	ISSI	获取价格	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16100E-6BLI-TR	ISSI	获取价格	DRAM

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