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IS41LV16100-60K PDF预览

IS41LV16100-60K

更新时间: 2024-01-28 01:38:54
品牌 Logo 应用领域
美国芯成 - ISSI /
页数 文件大小 规格书
20页 123K
描述
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

IS41LV16100-60K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:0.400 INCH, LEADFREE, PLASTIC, TSOP2-50/44
针数:50Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.82访问模式:FAST PAGE WITH EDO
最长访问时间:60 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e3长度:18.415 mm
内存密度:16777216 bit内存集成电路类型:EDO DRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44/50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
刷新周期:1024座面最大高度:1.2 mm
自我刷新:YES最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.145 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:10宽度:10.16 mm
Base Number Matches:1

IS41LV16100-60K 数据手册

 浏览型号IS41LV16100-60K的Datasheet PDF文件第2页浏览型号IS41LV16100-60K的Datasheet PDF文件第3页浏览型号IS41LV16100-60K的Datasheet PDF文件第4页浏览型号IS41LV16100-60K的Datasheet PDF文件第5页浏览型号IS41LV16100-60K的Datasheet PDF文件第6页浏览型号IS41LV16100-60K的Datasheet PDF文件第7页 
®
IS41C16100  
IS41LV16100  
1M x 16 (16-MBIT) DYNAMIC RAM  
WITH EDO PAGE MODE  
ISSI  
April 2003  
FEATURES  
DESCRIPTION  
• TTL compatible inputs and outputs; tristate I/O  
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit  
high-performance CMOS Dynamic Random Access Memories.  
ThesedevicesofferanacceleratedcycleaccesscalledEDOPage  
Mode. EDO Page Mode allows 1,024 random accesses within a  
singlerowwithaccesscycletimeasshortas20nsper16-bitword.  
The Byte Write control, of upper and lower byte, makes the  
IS41C16100idealforusein16-bitand32-bitwidedatabussystems.  
• Refresh Interval:  
— Auto refresh Mode: 1,024 cycles /16 ms  
RAS-Only, CAS-before-RAS (CBR), and Hidden  
— Self refresh Mode - 1,024 cycles / 128ms  
• JEDEC standard pinout  
ThesefeaturesmaketheIS41C16100andIS41LV16100ideallysuited  
for high-bandwidth graphics, digital signal processing, high-  
performancecomputingsystems,andperipheralapplications.  
• Single power supply:  
— 5V ± 10% (IS41C16100)  
— 3.3V ± 10% (IS41LV16100)  
TheIS41C16100andIS41LV16100arepackagedina42-pin400-  
milSOJand400-mil50-(44-)pinTSOP(TypeII).Thelead-free400-  
mil50-(44-)optionisavailabletoo.  
• Byte Write and Byte Read operation via two CAS  
• Industrail Temperature Range -40oC to 85oC  
KEY TIMING PARAMETERS  
Parameter  
-50  
50  
13  
25  
20  
84  
-60  
60  
Unit  
ns  
PIN CONFIGURATIONS  
Max. RAS Access Time (tRAC)  
Max. CAS Access Time (tCAC)  
Max. Column Address Access Time (tAA)  
Min. EDO Page Mode Cycle Time (tPC)  
Min. Read/Write Cycle Time (tRC)  
50(44)-Pin TSOP (Type II)  
42-PinSOJ  
15  
ns  
30  
ns  
25  
ns  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
I/O4  
I/O5  
I/O6  
I/O7  
NC  
1
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
GND  
I/O15  
I/O14  
I/O13  
I/O12  
GND  
I/O11  
I/O10  
I/O9  
I/O8  
NC  
2
2
104  
ns  
3
3
4
4
5
5
6
PIN DESCRIPTIONS  
6
7
7
8
8
A0-A9  
I/O0-15  
WE  
Address Inputs  
Data Inputs/Outputs  
Write Enable  
9
9
10  
11  
I/O8  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
NC  
NC  
NC  
WE  
RAS  
NC  
NC  
A0  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
NC  
LCAS  
UCAS  
OE  
OE  
Output Enable  
LCAS  
UCAS  
OE  
WE  
RAS  
NC  
RAS  
UCAS  
LCAS  
Vcc  
Row Address Strobe  
A9  
A9  
Upper Column Address Strobe  
Lower Column Address Strobe  
Power  
NC  
A8  
A8  
A0  
A7  
A7  
A1  
A6  
A1  
A6  
A2  
A5  
A2  
A5  
A3  
A4  
A3  
A4  
GND  
NC  
Ground  
VCC  
GND  
VCC  
GND  
No Connection  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
IIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
R e v . I  
1
04/16/03  

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