Datasheet > IS41C44002-50JI

IS41C44002-50JI

更新时间： 2024-01-31 14:41:14

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
19页	159K
描述
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

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数据手册

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IS41C44002-50JI 数据手册

IS41C4400X

IS41LV4400X SERIES

ISSI

ACCHARACTERISTICS^{(1,2,3,4,5,6)}

(Recommended Operating Conditions unless otherwise noted.)

-50

-60

Symbol

tRC

Parameter

Min.

—

Max.

—

Min.

104

—

Max.

—

Units

Random READ or WRITE Cycle Time

Access Time from RAS^{(6, 7)}

Access Time from CAS^{(6, 8, 15)}

Access Time from Column-Address⁽⁶⁾

RAS Pulse Width

tRAC

tCAC

tAA

tRAS

tRP

10K

—

10K

—

RAS Precharge Time

CAS Pulse Width⁽²³⁾

CAS Precharge Time⁽⁹⁾

CAS Hold Time ⁽²¹⁾

RAS to CAS Delay Time^{(10, 20)}

Row-Address Setup Time

Row-Address Hold Time

Column-Address Setup Time⁽²⁰⁾

Column-Address Hold Time⁽²⁰⁾

tCAS

tCP

10K

—

10K

—

tCSH

tRCD

tASR

tRAH

tASC

tCAH

tAR

—

Column-Address Hold Time

—

(referenced to RAS)

tRAD

tRAL

tRPC

tRSH

tRHCP

tCLZ

tCRP

tOD

RAS to Column-Address Delay Time⁽¹¹⁾

Column-Address to RAS Lead Time

RAS to CAS Precharge Time

RAS Hold Time

—

RAS Hold Time from CAS Precharge

CAS to Output in Low-Z^{(15, 24)}

CAS to RAS Precharge Time⁽²¹⁾

Output Disable Time^{(19, 24)}

tOE

Output Enable Time^{(15, 16)}

—

tOED

tOEHC

tOEP

tOES

tRCS

tRRH

Output Enable Data Delay (Write)

OE HIGH Hold Time from CAS HIGH

OE HIGH Pulse Width

OE LOW to CAS HIGH Setup Time

Read Command Setup Time^{(17, 20)}

Read Command Hold Time

(referenced to RAS)⁽¹²⁾

tRCH

Read Command Hold Time

—

(referenced to CAS)^{(12, 17, 21)}

tWCH

tWCR

Write Command Hold Time⁽¹⁷⁾

—

Write Command Hold Time

(referenced to RAS)⁽¹⁷⁾

tWP

Write Command Pulse Width⁽¹⁷⁾

—

tWPZ

WE Pulse Widths to Disable Outputs

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

1...3 4 567 8 9...19

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