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IS23SC1604-X7 PDF预览

IS23SC1604-X7

更新时间: 2024-02-26 11:22:58
品牌 Logo 应用领域
美国芯成 - ISSI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
18页 78K
描述
16-KBIT SECURED SERIAL EEPROM

IS23SC1604-X7 数据手册

 浏览型号IS23SC1604-X7的Datasheet PDF文件第1页浏览型号IS23SC1604-X7的Datasheet PDF文件第2页浏览型号IS23SC1604-X7的Datasheet PDF文件第3页浏览型号IS23SC1604-X7的Datasheet PDF文件第5页浏览型号IS23SC1604-X7的Datasheet PDF文件第6页浏览型号IS23SC1604-X7的Datasheet PDF文件第7页 
®
IS23SC1604  
ISSI  
IS23SC1604 OPERATIONS  
Power-On Reset (POR)  
When the supply voltage is first applied to the device,  
the device initiates POR. All the internal flags are clear  
(refer to Definition of IS23SC1604 Internal Flags), and  
the internal address counter is reset to zero.  
The compare operation latches the user’s input Security/  
Erase Key bit into the device at the rising edge of CLK  
and the bit comparison is performed on the next falling  
edge of CLK.The compare and read operations are  
executed in the same manner.The device distinguishes  
between the two operations by testing the address  
counter for security/erase key code location and the  
state of corresponding security/erase key code valid  
comparison flag (see ReadTiming Diagram).  
Reset  
With CLK LOW, a HIGH-to-LOW transition at RST  
resets the address counter to zero. After the falling edge  
of RST, the device outputs the first bit of the memory on  
I/O pin. The reset operation will have no effect on any  
internal flags (see AC Test Load).  
Write  
If write access to a memory bit is enabled, the content  
of the bit can be written over with a ‘0’ value by perform-  
ing the following sequence: select PGM (logic HIGH  
state), input ‘0’ on the I/O pin, change CLK from LOW-  
to-HIGH, deselect PGM (logic LOW state), wait for 5 ms  
programming delay, and then bring CLK down from  
HIGH-to-LOW to complete the write operation.The new  
state of the bit will be output at the end of the write  
operation after the falling edge of CLK for data verifica-  
tion (see Compare Timing Diagram).  
Addressing  
Addressing is handled by an internal address counter  
which is incremented on the falling edge of CLK. When  
the counter continues to increment past 16383, the  
counter will roll over back to zero.The counter can also  
be cleared to zero by the reset operation.  
Read  
If read access to a memory bit is enabled, the state of  
the bit can be read out of the device by incrementing  
the address counter to the bit location.The device  
outputs the state of the read bit on the I/O pin after the  
falling edge of the last clock pulse that increments the  
address counter to the read bit location. However, if the  
read access to the memory bit is inhibited, the state of  
the data bit will not be output and the I/O pin will be  
placed in high-impedance state1(see ResetTiming  
Diagram).  
Erase  
If erase access to a memory bit is enabled, the content  
of the bit can be written over with a ‘1’ value with the  
erase operation. Although erase is performed on single  
bits, the erase operation writes FFH to the whole byte  
which contains the erased bits because the memory is  
organized into 8-bit bytes. The erase operation can be  
executed by performing the following sequence: select  
PGM (logic HIGH state), input ‘1’ on the I/O pin, change  
CLK from LOW-to-HIGH, deselect PGM (logic LOW  
state), wait for 5 msec programming delay, and then  
bring CLK down from HIGH-to-LOW to complete the  
erase operation. The new state of the bit will be output  
at the end of the erase operation after the falling edge of  
CLK for data verification (see Compare Timing Dia-  
gram).  
Compare  
Compare operation allows users to input the security/  
erase key code for the security/erase key code valida-  
tion for read/write/erase access to protected application  
zones (refer to Security/Erase Key Code Validation  
Operation).  
4
Integrated Silicon Solution, Inc. — 1-800-379-4774  
ADVANCEINFORMATION Rev. 00E  
04/10/03  

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