Datasheet > IS2-1009EH-Q

IS2-1009EH-Q

更新时间： 2024-02-16 04:28:35

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
3页	128K
描述
Radiation Hardened 2.5V Reference

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技术参数
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IS2-1009EH-Q 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BCY
包装说明：	TO-206, CAN3/4,.1	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	USML XV(E)
HTS代码：	8542.39.00.01	风险等级：	5.56
模拟集成电路 - 其他类型：	TWO TERMINAL VOLTAGE REFERENCE	JESD-30 代码：	O-XBCY-W3
JESD-609代码：	e4	功能数量：	1
输出次数：	1	端子数量：	3
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大输出电压：	2.505 V	最小输出电压：	2.495 V
标称输出电压：	2.5 V	封装主体材料：	UNSPECIFIED
封装代码：	TO-206	封装等效代码：	CAN3/4,.1
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
筛选级别：	MIL-PRF-38535 Class V	子类别：	Voltage References
表面贴装：	NO	技术：	BIPOLAR
最大电压温度系数：	33.333 ppm/ °C	温度等级：	MILITARY
端子面层：	GOLD	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
总剂量：	300k Rad(Si) V	微调/可调输出：	YES
最大电压容差：	0.2%	Base Number Matches：	1

IS2-1009EH-Q 数据手册

Radiation Hardened 2.5V Reference

IS-1009RH, IS-1009EH

Features

• Electrically screened to SMD # 5962-00523

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Star*Power Radiation Hardened IS-1009RH, IS-1009EH

are a 2.5V shunt regulator diode is designed to provide a stable

2.5V reference over a wide current range.

These devices are designed to maintain stability over the full

military temperature range and over time. The 0.2% reference

tolerance is achieved by on-chip trimming.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated

An adjustment terminal is provided to allow for the calibration

of system errors. The use of this terminal to adjust the

reference voltage does not effect the temperature coefficient.

• Reverse breakdown voltage (V ) . . . . . . . . . . . . . . . . . . . . 2.5V

• Change in V vs. current (400µA to 10mA) . . . . . . . . . . .6mV

Constructed with the Intersil dielectrically isolated EBHF

process, these devices are immune to Single Event Latch-up

and have been specifically designed to provide highly reliable

performance in harsh radiation environments.

• Change in V vs. temperature (-55°C to +125°C). . . . .15mV

• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA

• Device is tested with 10µF shunt capacitance connected

from V+ to V-, which provides optimum stability

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

• Interchangeable with 1009 and 136 industry types

Detailed Electrical Specifications for these devices are

contained in SMD 5962-00523.

Applications

• Power supply monitoring

• Reference for 5V systems

• A/D and D/A reference

Pin Configurations

IS2-1009RH, IS2-1009EH

(TO-206AB CAN)

BOTTOM VIEW

V+

V-

ADJ

ISYE-1009RH, ISYE-1009EH

(SMD.5)

BOTTOM VIEW

ADJ

V+

V-

September 12, 2013

FN4780.6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3

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与IS2-1009EH-Q相关器件

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