Datasheet > IS2-1009EH-Q

IS2-1009EH-Q

更新时间： 2024-11-30 12:32:15

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
3页	128K
描述
Radiation Hardened 2.5V Reference

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数据手册

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IS2-1009EH-Q 数据手册

Radiation Hardened 2.5V Reference

IS-1009RH, IS-1009EH

Features

• Electrically screened to SMD # 5962-00523

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Star*Power Radiation Hardened IS-1009RH, IS-1009EH

are a 2.5V shunt regulator diode is designed to provide a stable

2.5V reference over a wide current range.

These devices are designed to maintain stability over the full

military temperature range and over time. The 0.2% reference

tolerance is achieved by on-chip trimming.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated

An adjustment terminal is provided to allow for the calibration

of system errors. The use of this terminal to adjust the

reference voltage does not effect the temperature coefficient.

• Reverse breakdown voltage (V ) . . . . . . . . . . . . . . . . . . . . 2.5V

• Change in V vs. current (400µA to 10mA) . . . . . . . . . . .6mV

Constructed with the Intersil dielectrically isolated EBHF

process, these devices are immune to Single Event Latch-up

and have been specifically designed to provide highly reliable

performance in harsh radiation environments.

• Change in V vs. temperature (-55°C to +125°C). . . . .15mV

• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA

• Device is tested with 10µF shunt capacitance connected

from V+ to V-, which provides optimum stability

Specifications for Rad Hard QML devices are controlled by the

Defense Logistics Agency Land and Maritime (DLA). The SMD

numbers listed here must be used when ordering.

• Interchangeable with 1009 and 136 industry types

Detailed Electrical Specifications for these devices are

contained in SMD 5962-00523.

Applications

• Power supply monitoring

• Reference for 5V systems

• A/D and D/A reference

Pin Configurations

IS2-1009RH, IS2-1009EH

(TO-206AB CAN)

BOTTOM VIEW

V+

V-

ADJ

ISYE-1009RH, ISYE-1009EH

(SMD.5)

BOTTOM VIEW

ADJ

V+

V-

September 12, 2013

FN4780.6

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

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与IS2-1009EH-Q相关器件

型号	品牌	获取价格	描述	数据表
IS2-1009RH/PROTO	INTERSIL	获取价格	Radiation Hardened 2.5V Reference
IS2-1009RH-8	INTERSIL	获取价格	Radiation Hardened 2.5V Reference
IS2-1009RH-Q	INTERSIL	获取价格	Radiation Hardened 2.5V Reference
IS-2100AEH	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Drivers
IS-2100AEH	RENESAS	获取价格	Radiation Hardened High Frequency Half Bridge Drivers
IS-2100ARH	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Driver
IS-2100ARH	RENESAS	获取价格	Radiation Hardened High Frequency Half Bridge Drivers
IS2100G	ISOCOM	获取价格	Optoelectronic Device
IS210X	ETC	获取价格
IS211	ISOCOM	获取价格	Small Outline Photo DMOS-FET Relay with High Load Voltage Capabilities

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