5秒后页面跳转
IRLI530A PDF预览

IRLI530A

更新时间: 2024-09-29 22:23:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 274K
描述
ADVANCED POWER MOSFET

IRLI530A 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
Is Samacsys:N雪崩能效等级(Eas):261 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-262AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):62 W最大脉冲漏极电流 (IDM):49 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRLI530A 数据手册

 浏览型号IRLI530A的Datasheet PDF文件第2页浏览型号IRLI530A的Datasheet PDF文件第3页浏览型号IRLI530A的Datasheet PDF文件第4页浏览型号IRLI530A的Datasheet PDF文件第5页浏览型号IRLI530A的Datasheet PDF文件第6页浏览型号IRLI530A的Datasheet PDF文件第7页 
IRLW/I530A  
FEATURES  
BVDSS = 100 V  
RDS(on) = 0.12  
ID = 14 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
D2-PAK  
I2-PAK  
175 C Operating Temperature  
°
2
Lower Leakage Current: 10 A (Max.) @ VDS = 100V  
µ
Lower RDS(ON): 0. 101 (Typ.)  
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
100  
14  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
ID  
A
9.9  
IDM  
VGS  
EAS  
IAR  
(1)  
49  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
261  
14  
mJ  
A
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
6.2  
6.5  
3.8  
62  
mJ  
V/ns  
W
*
Total Power Dissipation (TA=25°C)  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
PD  
W
0.41  
W/°C  
Operating Junction and  
TJ , TSTG  
- 55 to +175  
300  
Storage Temperature Range  
°C  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
2.41  
40  
RθJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
°C/W  
RθJA  
62.5  
When mounted on the minimum pad size recommended (PCB Mount).  
*
Rev. B  
©1999 Fairchild Semiconductor Corporation  
1

与IRLI530A相关器件

型号 品牌 获取价格 描述 数据表
IRLI530ATU FAIRCHILD

获取价格

Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met
IRLI530G INFINEON

获取价格

HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.1
IRLI530G VISHAY

获取价格

Power MOSFET
IRLI530G-002 VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-003 VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-003PBF VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-004 VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-005 VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-005PBF VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRLI530G-006 VISHAY

获取价格

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me