IRL3302S

更新时间： 2024-09-30 22:48:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	92K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRL3302S 数据手册

PD - 9.1692A

IRL3302S

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.020W

I_D= 39A

Description

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters. Advanced processing techniques

combined with an optimized gate oxide design results

in a die sized specifically to offer maximum efficiency

at minimum cost.

The D²Pak is a surface mount power package capable

of accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because

of its low internal connection resistance and can

dissipate up to 2.0W in a typical surface mount

application.

D ²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 4.5Vꢀ

Pulsed Drain Current ꢀ

160

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

± 10

130

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.7

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

2.2

Units

R_qJC

R_qJA

°C/W

9/17/97

12 3 4 5 6 7 8

中文翻译

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