IRL3402STRL

更新时间： 2024-10-01 13:08:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	100K
描述
Power Field-Effect Transistor, 85A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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IRL3402STRL 数据手册

PD - 9.1697

IRL3402

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Optimized for 4.5V-7.0V Gate Drive

l Ideal for CPU Core DC-DC Converters

l Fast Switching

V_DSS= 20V

R_DS(on)= 0.01Ω

I_D= 85Aꢀ

Description

These HEXFET Power MOSFETs were designed

specifically to meet the demands of CPU core DC-DC

converters. Advanced processing techniques

combined with an optimized gate oxide design results

in a die sized specifically to offer maximum efficiency

at minimum cost.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

85ꢀ

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 5.0V

Pulsed Drain Current

340

110

0.91

± 10

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

V_GSM

Gate-to-Source Voltage

(Start Up Transient, tp = 100µs)

Single Pulse Avalanche Energy

Avalanche Current

E_AS

I_AR

290

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.1

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

10/31/97

12 3 4 5 6 7

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