Datasheet > IRKUF200-08HKPBF

IRKUF200-08HKPBF

更新时间： 2024-11-23 14:34:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅栅极
页数	文件大小	规格书
8页	287K
描述
Silicon Controlled Rectifier, 444A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, MAGN-A-PAK-7

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IRKUF200-08HKPBF 数据手册

Bulletin I27099 rev. C 03/01

IRK.F200.. SERIES

FAST THYRISTOR/ DIODE and

THYRISTOR/THYRISTOR

MAGN-A-pak Power Modules

Features

200 A

Fast turn-off thyristor

Fast recovery diode

High surge capability

Electrically isolated baseplate

3000 V_RMSisolating voltage

Industrial standard package

UL E78996 approved

Description

These series of MAGN-A-pak modules are intended for

applications such as self-commutated inverters, DC

choppers, electronic welders, induction heating and

others where fast switching characteristics are required.

Major Ratings and Characteristics

Parameters

IRK.F200..

Units

I_T(AV)

200

°C

@T_C

I_T(RMS)

I_TSM

444

@50Hz

@60Hz

@50Hz

@60Hz

7600

8000

I t

290

KA s

265

KA s

I √t

2900

KA √s

20and 25

µs

V_DRM/V_RRM

upto1200

-40to125

T_J

range

^oC

www.irf.com

12 3 4 5 6 7 8

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IRKUF200-08HP	INFINEON	获取价格	Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 800V V(DRM), 800V V(RRM), 2 Ele
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IRKUF200-08J	INFINEON	获取价格	Silicon Controlled Rectifier, 444A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, POWER, MA
IRKUF200-08JN	INFINEON	获取价格	Silicon Controlled Rectifier, 444A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, POWER, MA
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IRKUF200-10CK	INFINEON	获取价格	Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 E
IRKUF200-10CKN	INFINEON	获取价格	Silicon Controlled Rectifier, 314A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element
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