Datasheet > IRKT72/10P

IRKT72/10P

更新时间： 2024-11-21 14:22:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
10页	280K
描述
Silicon Controlled Rectifier, 75000mA I(T), 1000V V(RRM),

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中文翻译

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技术参数
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IRKT72/10P 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.23	最大直流栅极触发电流：	270 mA
最大直流栅极触发电压：	2.5 V	快速连接描述：	2G-2GR
螺丝端子的描述：	A-K-AK	最大维持电流：	250 mA
最大漏电流：	15 mA	通态非重复峰值电流：	1940 A
最大通态电流：	75000 A	最高工作温度：	125 °C
最低工作温度：	-40 °C	重复峰值反向电压：	1000 V
子类别：	Silicon Controlled Rectifiers	触发设备类型：	SCR
Base Number Matches：	1

IRKT72/10P 数据手册

Bulletin I27211 03/06

IRK.71, .91..PbF SERIES

ADD-A-pak^TMGEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

Features

Benefits

High Voltage

Up to 1600V

IndustrialStandardPackage

Thickcopperbaseplate

UL E78996 approved

3500V_RMSisolatingvoltage

TOTALLYLEAD-FREE

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al₂0₃DBC insulator

Heatsink grounded

75 A

95 A

Mechanical Description

Theelectricalterminalsaresecuredagainstaxialpull-out:

they are fixed to the module housing via a click-stop

feature already tested and proved as reliable on other IR

modules.

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage

of Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a

solidCopperbaseplateatthebottomsideofthedevice.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

Electrical Description

These modules are intended for general purpose high

voltageapplicationssuchashighvoltageregulatedpower

supplies, lighting circuits, temperature and motor speed

control circuits, UPS and battery charger.

The Generation V of AAP module is manufactured

without hard mold, eliminating in this way any possible

direct stress on the leads.

Major Ratings and Characteristics

Parameters IRK.71

IRK.91

Units

I_T(AV)or I_F(AV)

@85°C

I_O(RMS)(*)

165

210

I_TSM@50Hz

I_FSM@60Hz

1665

1740

1785

1870

I t @50Hz

13.86

15.91

KA s

@60Hz

12.56

138.6

14.52

159.1

KA s

I √t

KA √s

V_RRMrange

T_STG

400to1600

- 40 to 125

-40to125

^oC

T_J

(*) As AC switch.

www.irf.com

12 3 4 5 6 7...10

中文翻译

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与IRKT72/10P相关器件

型号	品牌	获取价格	描述	数据表
IRKT72/10PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240A
IRKT72/10S90	INFINEON	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 El
IRKT72/10S90P	INFINEON	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1000V V(RRM),
IRKT72/10S90PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, TO-240A
IRKT72/12	INFINEON	获取价格	Silicon Controlled Rectifier, 165A I(T)RMS, 70000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 El
IRKT72/12A	INFINEON	获取价格	ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT72/12A	VISHAY	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240A
IRKT72/12AS90	INFINEON	获取价格	ADD-A-pak GEN V Power Modules THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
IRKT72/12AS90	VISHAY	获取价格	Silicon Controlled Rectifier, 75000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, TO-240A
IRKT72/12AS90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 117.75A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, TO-2

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