Datasheet > IRKT27/08S90

IRKT27/08S90

更新时间： 2024-11-23 14:42:55

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅栅极
页数	文件大小	规格书
8页	161K
描述
Silicon Controlled Rectifier, 60A I(T)RMS, 25000mA I(T), 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA

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IRKT27/08S90 数据手册

Bulletin I27130 rev. C 09/97

IRK.26 SERIES

NEWADD-A-pak^TMPower Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

Features

Electrically isolated: DBC base plate

3500 V_RMSisolating voltage

27 A

Standard JEDEC package

Simplified mechanical designs, rapid assembly

Auxiliary cathode terminals for wiring convenience

High surge capability

Wide choice of circuit configurations

Large creepage distances

UL E78996 approved

Description

These IRK series of NEW ADD-A-paks use power

diodes and thyristors in a variety of circuit configura-

tions. The semiconductor chips are electrically iso-

lated from the base plate, allowing common heatsinks

and compact assemblies to be built. They can be

interconnected to form single phase or three phase

bridges or AC controllers. These modules are intended

for general purpose high voltage applications such as

high voltage regulated power supplies, lighting

circuits, and temperature and motor speed control

circuits.

Major Ratings and Characteristics

Parameters

I_T(AV)or I_F(AV)

IRK.26

Units

@85°C

I_O(RMS)(*)

I_TSM@50Hz

I_FSM@60Hz

400

420

800

730

8000

I t @50Hz

A s

@60Hz

A s

I √t

A √s

V_RRMrange

T_STG

400to1600

-40to125

T_J

(*) As AC switch.

www.irf.com

12 3 4 5 6 7 8

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IRKT27/08S90PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 60A I(T)RMS, 800V V(DRM), 800V V(RRM), 2 Element, TO-240AA
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IRKT27/12APBF	INFINEON	获取价格	Silicon Controlled Rectifier, 42.39A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, TO-24
IRKT27/12AS90	INFINEON	获取价格	ADD-A-pak-TM GEN V Power Modules