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IRKT250-16HLN

更新时间： 2024-11-19 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器二极管局域网
页数	文件大小	规格书
6页	151K
描述
Silicon Controlled Rectifier, 392.5A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 2 Element

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IRKT250-16HLN 数据手册

Bulletin I27102 rev. C 05/02

IRK. SERIES

SCR / SCR and SCR / DIODE

MAGN-A-pak Power Modules

Features

High voltage

Electrically isolated base plate

170A

230A

250A

3000 V

isolating voltage

RMS

Industrial standard package

Simplified mechanical designs, rapid assembly

High surge capability

Large creepage distances

UL E78996 approved

Description

This new IRK serie of MAGN-A-paks modules uses high

voltage power thyristor/thyristor and thyristor/diode in

seven basic configurations. The semiconductors are

electrically isolated from the metal base, allowing com-

mon heatsinks and compact assemblies to be built. They

can be interconnected to form single phase or three

phase bridges or as AC-switches when modules are

connected in anti-parallel mode.

These modules are intended for general purpose appli-

cations such as battery chargers, welders and plating

equipment and where high voltage and high current are

required (motor drives, U.P.S., etc.).

Major Ratings and Characteristics

Parameters

IRK.170.. IRK.230.. IRK.250.. Units

@ 85°C

170

377

230

510

250

555

T(AV)

T(RMS)

TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

5100

5350

131

7500

7850

280

8500

8900

361

I t

KA s

119

256

330

KA s

I √t

1310

2800

3610

KA √s

/ V

Up to1600 Up to 2000 Up to1600

-40 to 130

^oC

DRM

RRM

range

www.irf.com

12 3 4 5 6

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