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IRKL72/08AS90 PDF预览

IRKL72/08AS90

更新时间: 2024-11-23 19:40:07
品牌 Logo 应用领域
威世 - VISHAY 局域网栅极
页数 文件大小 规格书
11页 335K
描述
Silicon Controlled Rectifier, 75000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA, POWER, ADD-A-PAK-5

IRKL72/08AS90 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-240AA
包装说明:FLANGE MOUNT, R-XUFM-X5针数:5
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.16Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最大直流栅极触发电流:150 mA
最大直流栅极触发电压:4 V快速连接描述:G-GR
螺丝端子的描述:A-K-AK最大维持电流:250 mA
JEDEC-95代码:TO-240AAJESD-30 代码:R-XUFM-X5
JESD-609代码:e0最大漏电流:15 mA
通态非重复峰值电流:1940 A元件数量:1
端子数量:5最大通态电流:75000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified断态重复峰值电压:800 V
重复峰值反向电压:800 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:TIN LEAD
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

IRKL72/08AS90 数据手册

 浏览型号IRKL72/08AS90的Datasheet PDF文件第2页浏览型号IRKL72/08AS90的Datasheet PDF文件第3页浏览型号IRKL72/08AS90的Datasheet PDF文件第4页浏览型号IRKL72/08AS90的Datasheet PDF文件第5页浏览型号IRKL72/08AS90的Datasheet PDF文件第6页浏览型号IRKL72/08AS90的Datasheet PDF文件第7页 
Bulletin I27132 rev. I 09/04  
IRK.71, .91 SERIES  
ADD-A-pakTM GEN V Power Modules  
THYRISTOR/ DIODE and  
THYRISTOR/ THYRISTOR  
Features  
Benefits  
High Voltage  
Up to 1600V  
Industrial Standard Package  
Thick Al metal die and double stick bonding  
Thick copper baseplate  
Full compatible TO-240AA  
High Surge capability  
Easy Mounting on heatsink  
Al203 DBC insulator  
Heatsink grounded  
75 A  
95 A  
UL E78996 approved  
3500VRMS isolating voltage  
Mechanical Description  
Theelectricalterminalsaresecuredagainstaxialpull-out:  
they are fixed to the module housing via a click-stop  
feature already tested and proved as reliable on other IR  
modules.  
The Generation V of Add-A-pak module combine the  
excellent thermal performance obtained by the usage  
of Direct Bonded Copper substrate with superior  
mechanical ruggedness, thanks to the insertion of a  
solidCopperbaseplateatthebottomsideofthedevice.  
The Cu baseplate allow an easier mounting on the  
majority of heatsink with increased tolerance of surface  
roughness and improve thermal spread.  
Electrical Description  
These modules are intended for general purpose high  
voltageapplicationssuchashighvoltageregulatedpower  
supplies, lighting circuits, temperature and motor speed  
control circuits, UPS and battery charger.  
The Generation V of AAP module is manufactured  
without hard mold, eliminating in this way any possible  
direct stress on the leads.  
Major Ratings and Characteristics  
Parameters IRK.71  
IRK.91  
Units  
IT(AV)or IF(AV)  
75  
95  
A
A
@85°C  
IO(RMS) (*)  
165  
210  
ITSM @50Hz  
IFSM @60Hz  
1665  
1740  
1785  
1870  
A
A
2
2
I t @50Hz  
13.86  
15.91  
KA s  
2
@60Hz  
12.56  
138.6  
14.52  
159.1  
KA s  
2
2
I t  
KA s  
VRRM range  
TSTG  
400to1600  
V
- 40 to 125  
-40to125  
oC  
oC  
TJ  
(*) As AC switch.  
Document Number: 93750  
www.vishay.com  
1

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Silicon Controlled Rectifier, 117.75A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240
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IRKL72/08S90PBF INFINEON

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Silicon Controlled Rectifier, 165A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-240AA
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Silicon Controlled Rectifier, 117.75A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-2
IRKL72/10AS90 VISHAY

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Silicon Controlled Rectifier, 75000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A
IRKL72/10AS90PBF INFINEON

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Silicon Controlled Rectifier, 117.75A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-2
IRKL72/10PBF VISHAY

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Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A
IRKL72/10S90 INFINEON

获取价格

Silicon Controlled Rectifier, 165A I(T)RMS, 70000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 El
IRKL72/10S90PBF INFINEON

获取价格

Silicon Controlled Rectifier, 165A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-240A