Data Sheet No. PD 96949A
IRIS-G6651
INTEGRATED SWITCHER
Package Outline
Features
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology.
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in soft drive circuit
TO-220 Fullpack (5 Lead)
Key Specifications
• Built-in low frequency PRC mode (≒20kHz)
• Various kinds of protection functions
MOSFET
VDSS(V)
RDS(ON)
MAX
Pout(W)
Note 1
Type
AC input(V)
230±15%
85 to 264
66
30
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)
3.9Ω
IRIS-G6651
650
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
Operation, and the peak power output is obtained by approximately 120 to
140% of the above listed. When the output voltage is low and ON-duty is
narrow, the Pout (W) shall become lower than that of above.
Descriptions
IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant
(including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing
external components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-G6600
OCP/FB
Vin
GND
S
D
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