Datasheet > IRGCH40KE

IRGCH40KE

更新时间： 2024-11-28 23:58:55

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描述

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数据手册

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IRGCH40KE 数据手册

PD-9.1422

IRGCH40KE

TARGET

IRGCH40KE IGBT Die in Wafer Form

1200 V

Size 4

Ultra-Fast Speed

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=250µA

T_J= 25°C, V_CE= 1200V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

3.8V Max.

1200V Min.

3.0V Min., 6.0V Max.

250 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 500 nA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.170" x 0.232"

Wafer Diameter:

125mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5102

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : IRGPH40K

Die Outline

3.28

NOTES :

(.129 )

INK DOT

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

LOCATION

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

1.45

(.057 )

5.89

(.232 )

EMITTER

WIDTH

LENGTH

OVERALL DIE

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

> (.0250 ) TOLERANCE = +/- (.0010 )

< 1.270 TOLERANCE = +/- 0.102

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

> (.050 ) TOLERANCE = +/- (.008 )

0.72

(.028 )

0.73

(.029 )

LENGTH

4.31

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

(.170 )

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