IRFR9024NTR

更新时间： 2024-10-02 12:28:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
11页	128K
描述
Ultra Low On-Resistance

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中文翻译

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数据手册

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IRFR9024NTR 数据手册

PD - 9.1506

IRFR/U9024N

PRELIMINARY

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel

V_DSS= -55V

l Surface Mount (IRFR9024N)

l Straight Lead (IRFU9024N)

l Advanced Process Technology

l Fast Switching

R_DS(on)= 0.175Ω

I_D= -11A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-11

-8

-44

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.30

± 20

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

-6.6

3.8

-10

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

6/26/97

12 3 4 5 6 7...11

中文翻译

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与IRFR9024NTR相关器件

型号	品牌	获取价格	描述	数据表
IRFR9024NTRLPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR9024NTRPBF	INFINEON	获取价格	Advanced Process Technology
IRFR9024PBF	KERSEMI	获取价格	Power MOSFET
IRFR9024PBF	VISHAY	获取价格	Power MOSFET
IRFR9024PBF	INFINEON	获取价格	HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) =
IRFR9024TR	VISHAY	获取价格	Power MOSFET
IRFR9024TR	KERSEMI	获取价格	Power MOSFET
IRFR9024TRA	KERSEMI	获取价格	Power MOSFET
IRFR9024TRL	KERSEMI	获取价格	Power MOSFET
IRFR9024TRL	VISHAY	获取价格	Power MOSFET