Datasheet > IRFI9634G

IRFI9634G

更新时间： 2024-01-28 09:09:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	122K
描述
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)

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IRFI9634G 数据手册

PD - 9.1488

IRFI9634G

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 150°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

V_DSS= -250V

R_DS(on)= 1.0Ω

I_D= -4.1A

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

and cost-effectiveness.Third Generation HEXFETs from

International Rectifier provide the designer with the

best combination of fast switching, ruggedized device

design, low on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

-4.1

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-2.6

-16

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.28

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

520

-4.1

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

3.5

V/ns

-5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

3.6

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient

–––

8/8/96

12 3 4 5 6 7 8

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