是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | TO-220, FULL PACK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.06 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 520 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 4.1 A | 最大漏极电流 (ID): | 4.1 A |
最大漏源导通电阻: | 1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 35 W | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFI9634GPBF | VISHAY |
完全替代 ![]() |
Power MOSFET |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI9634GPBF | VISHAY |
获取价格 |
Power MOSFET |
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IRFI9634GPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET |
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IRFI9640 | INFINEON |
获取价格 |
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) |
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IRFI9640G | INFINEON |
获取价格 |
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) |
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IRFI9640G | VISHAY |
获取价格 |
Power MOSFET |
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IRFI9640G-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |
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IRFI9640G-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |
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IRFI9640G-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |
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IRFI9640G-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |
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IRFI9640G-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Met |
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