Datasheet > IRFI640G

IRFI640G

更新时间： 2024-11-23 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1801K
描述
Power MOSFET

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IRFI640G 数据手册

IRFI640G, SiHFI640G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

PRODUCT SUMMARY

V_DS(V)

200

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

Available

R_DS(on)(Ω)

V_GS= 10 V

0.18

RoHS*

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

• Low Thermal Resistance

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220 FULLPAK

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. The isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI640GPbF

SiHFI640G-E3

IRFI640G

Lead (Pb)-free

SnPb

SiHFI640G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

200

_C= 25 °C

9.8

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

6.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

430

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

9.8

E_AR

4.0

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 6.7 mH, R_G= 25 Ω, I_AS= 9.8 A (see fig. 12).

c. I_SD≤ 18 A, dI/dt ≤ 150 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91150

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFI640G相关器件

型号	品牌	获取价格	描述	数据表
IRFI640G-002	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-003	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-005	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me
IRFI640G-010	INFINEON	获取价格	Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Me

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