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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRF624 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF624 | ROCHESTER |
获取价格 |
3.8A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
|
| IRF624 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |
|
| IRF624 | VISHAY |
获取价格 |
Power MOSFET |
|
| IRF624 | RENESAS |
获取价格 |
3.8A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
|
| IRF624-001 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF624-001PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF624-005PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF624-011PBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRF624-030 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met |
|
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