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IR2118PBF PDF预览

IR2118PBF

更新时间: 2024-02-17 01:57:42
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
18页 154K
描述
SINGLE CHANNEL DRIVER

IR2118PBF 数据手册

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Data Sheet No. PD60146 Rev N  
IR2117(S)/IR2118(S)&(PbF)  
SINGLE CHANNEL DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
V
600V max.  
200 mA / 420 mA  
10 - 20V  
OFFSET  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
Gate drive supply range from 10 to 20V  
Undervoltage lockout  
CMOS Schmitt-triggered inputs with pull-down  
V
OUT  
Output in phase with input (IR2117) or out of  
t
(typ.)  
125 & 105 ns  
on/off  
phase with input (IR2118)  
Also available LEAD-FREE  
Packages  
Description  
The IR2117/IR2118(S) is a high voltage, high speed  
power MOSFET and IGBT driver. Proprietary HVIC and  
latch immune CMOS technologies enable ruggedized  
monolithic construction. The logic input is compatible  
with standard CMOS outputs. The output driver fea-  
tures a high pulse current buffer stage designed for  
minimum cross-conduction. The floating channel can  
be used to drive an N-channel power MOSFET or IGBT  
in the high or low side configuration which operates up  
to 600 volts.  
8-Lead PDIP  
IR2117/IR2118  
8-Lead SOIC  
IR2117S/IR2118S  
Typical Connection  
up to 600V  
VCC  
IN  
VCC  
IN  
VB  
HO  
VS  
TO  
LOAD  
COM  
IR2117  
up to 600V  
VCC  
IN  
VCC  
IN  
VB  
HO  
TO  
LOAD  
COM  
VS  
IR2118  
(Refer to Lead Assignments for correct pin configuration).  
This/These diagram(s) show electrical connections only.  
Please refer to our Application Notes and DesignTips for  
proper circuit board layout.  
www.irf.com  
1

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