Data Sheet No. PD60146 Rev N
IR2117(S)/IR2118(S)&(PbF)
SINGLE CHANNEL DRIVER
Features
Product Summary
Floating channel designed for bootstrap operation
•
V
600V max.
200 mA / 420 mA
10 - 20V
OFFSET
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
I +/-
O
Gate drive supply range from 10 to 20V
Undervoltage lockout
CMOS Schmitt-triggered inputs with pull-down
•
•
V
OUT
•
• Output in phase with input (IR2117) or out of
t
(typ.)
125 & 105 ns
on/off
phase with input (IR2118)
Also available LEAD-FREE
•
Packages
Description
The IR2117/IR2118(S) is a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible
with standard CMOS outputs. The output driver fea-
tures a high pulse current buffer stage designed for
minimum cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT
in the high or low side configuration which operates up
to 600 volts.
8-Lead PDIP
IR2117/IR2118
8-Lead SOIC
IR2117S/IR2118S
Typical Connection
up to 600V
VCC
IN
VCC
IN
VB
HO
VS
TO
LOAD
COM
IR2117
up to 600V
VCC
IN
VCC
IN
VB
HO
TO
LOAD
COM
VS
IR2118
(Refer to Lead Assignments for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for
proper circuit board layout.
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