IR2122SPBF

更新时间： 2024-11-21 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器
页数	文件大小	规格书
6页	94K
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数据手册

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IR2122SPBF 数据手册

Preliminary Data Sheet No. PD60130 J

( )

IR2122 S

CURRENT SENSING SINGLE CHANNEL DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

600V max.

110 mA / 110 mA

10 - 20V

OFFSET

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

I +/-

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

OUT

• 3.3V, 5V and 15V input logic compatible

• FAULT lead indicates shutdown has occured

• Output out of phase with input

CSth

500 mV

(typ.)

250 & 200 ns

on/off

Description

The IR2122(S) is a high voltage, high speed power

MOSFET and IGBT driver.Proprietary HVIC and latch

immune CMOS technologies enable ruggedized

monolithic construction.The logic input is compatible

with standard CMOS or LSTTL outputs, down to

3.3V. The protection circuity detects over-current in

the driven power transistor and terminates the gate

drive voltage. An open drain FAULTsignal is pro-

vided to indicate that an over-current shutdown has

occurred. The output driver features a high pulse

current buffer stage designed for minimum cross-con-

duction.The floating channel can be used to drive an

N-channel power MOSFET or IGBT in the high side

or low side configuration which operates up to 600

volts.

Packages

8-Lead SOIC

8-Lead PDIP

Typical Connection

V_CC

V_B

V_S

FAULT

COM

(Refer to Lead Assignments for correct pin configuration). This/These

diagram(s) show electrical connections only. Please refer to our

Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6

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