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IR2125 PDF预览

IR2125

更新时间: 2024-11-17 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
16页 451K
描述
CURRENT LIMITING SINGLE CHANNEL DRIVER

IR2125 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.31其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES输入特性:SCHMITT TRIGGER
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:R-PDIP-T8
长度:9.88 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出特性:TOTEM-POLE
标称输出峰值电流:3.3 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.33 mm最大供电电压:18 V
最小供电电压:标称供电电压:15 V
电源电压1-最大:518 V电源电压1-分钟:7 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.25 µs
接通时间:0.2 µs宽度:7.62 mm
Base Number Matches:1

IR2125 数据手册

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Previous Datasheet  
Index  
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Data Sheet No. PD-6.017D  
IR2125  
CURRENT LIMITING SINGLE CHANNEL DRIVER  
Features  
n Floating channel designed for bootstrap operation  
Fully operational to +500V  
Product Summary  
V
500V max.  
1A / 2A  
OFFSET  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
n Gate drive supply range from 12 to 18V  
n Undervoltage lockout  
V
OUT  
12 - 18V  
n Current detection and limiting loop to limit driven  
power transistor current  
n Error lead indicates fault conditions and programs  
shutdown time  
V
230 mV  
CSth  
t
(typ.)  
150 & 150 ns  
on/off  
n Output in phase with input  
Package  
Description  
The IR2125 is a high voltage, high speed power  
MOSFET and IGBT driver with over-current limit-  
ing protection circuitry. Proprietary HVIC and latch  
immune CMOS technologies enable ruggedized  
monolithic construction. Logic inputs are compat-  
ible with standard CMOS or LSTTL outputs. The  
output driver features a high pulse current buffer  
stage designed for minimum driver cross-conduc-  
tion. The protection circuitry detects over-current  
in the driven power transistor and limits the gate  
drive voltage. Cycle by cycle shutdown is pro-  
grammed by an external capacitor which directly  
controls the time interval between detection of the  
over-current limiting conditions and latched shut-  
down. The floating channel can be used to drive an  
N-channel power MOSFET or IGBT in the high or  
low side configuration which operates up to 500  
volts.  
Typical Connection  
up to 500V  
VCC  
IN  
VB  
OUT  
CS  
VCC  
IN  
ERR  
COM  
TO  
LOAD  
VS  
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL B-107  
To Order  
 
 

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