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IR2125PBF PDF预览

IR2125PBF

更新时间: 2024-11-18 12:02:39
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
17页 216K
描述
CURRENT LIMITING SINGLE CHANNEL DRIVER

IR2125PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DIP, DIP8,.3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:12 weeks风险等级:1.27
Samacsys Description:SINGLE CHANNEL DRIVER其他特性:FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDIP-T8长度:9.88 mm
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
标称输出峰值电流:3.3 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:18 V
最小供电电压:标称供电电压:15 V
电源电压1-最大:518 V电源电压1-分钟:7 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:0.25 µs
接通时间:0.2 µs宽度:7.62 mm

IR2125PBF 数据手册

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Data Sheet No. PD60017 Rev.Q  
( )&(PbF)  
S
IR2125  
CURRENT LIMITING SINGLE CHANNEL DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +500V  
V
500V max.  
1A / 2A  
OFFSET  
Tolerant to negative transient voltage  
dV/dt immune  
I +/-  
O
Gate drive supply range from 12 to 18V  
Undervoltage lockout  
V
OUT  
12 - 18V  
Current detection and limiting loop to limit driven  
power transistor current  
V
CSth  
230 mV  
Error lead indicates fault conditions and programs  
shutdown time  
t
(typ.)  
150 & 150 ns  
on/off  
Output in phase with input  
2.5V, 5V and 15V input logic compatible  
Also available LEAD-Free  
Packages  
Description  
The IR2125(S) is a high voltage, high speed power  
MOSFET and IGBT driver with over-current limiting  
protection circuitry. Proprietary HVIC and latch im-  
mune CMOS technologies enable ruggedized mono-  
lithic construction. Logic inputs are compatible with  
standard CMOS or LSTTL outputs, down to 2.5V  
logic. The output driver features a high pulse current  
16-Lead SOIC  
(Wide Body)  
8-Lead PDIP  
buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the  
driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external  
capacitor which directly controls the time interval between detection of the over-current limiting conditions and  
latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high  
or low side configuration which operates up to 500 volts.  
Typical Connection  
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ꢁꢁ  
ꢇꢈ  
ꢇꢈ  
ꢄꢅ  
ꢁꢃ  
(Refer to Lead Assignments  
for correct pin configura-  
tion). This/These diagram(s)  
show electrical connections  
only. Please refer to our  
Application Notes and  
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ꢋꢅ  
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DesignTips for proper circuit  
board layout.  
www.irf.com  
1

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