Datasheet > IR2121PBF

IR2121PBF

更新时间： 2024-02-05 06:28:48

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器
页数	文件大小	规格书
16页	155K
描述
CURRENT LIMITING LOW SIDE DRIVER

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技术参数
数据手册

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IR2121PBF 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	DIP, DIP8,.3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	12 weeks	风险等级：	1.18
高边驱动器：	NO	接口集成电路类型：	BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码：	R-PDIP-T8	长度：	9.88 mm
功能数量：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
标称输出峰值电流：	3.3 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装等效代码：	DIP8,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	15 V
认证状态：	Not Qualified	座面最大高度：	5.33 mm
子类别：	MOSFET Drivers	最大供电电压：	23 V
最小供电电压：	7 V	标称供电电压：	15 V
表面贴装：	NO	技术：	CMOS
温度等级：	AUTOMOTIVE	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	断开时间：	0.25 µs
接通时间：	0.2 µs	宽度：	7.62 mm
Base Number Matches：	1

IR2121PBF 数据手册

Data Sheet No. PD60018 M

IR2121

& (PbF)

CURRENT LIMITING LOW SIDE DRIVER

Features

Product Summary

• Gate drive supply range from 12 to 18V

• Undervoltage lockout

5V max.

1A / 2A

OFFSET

• Current detection and limiting loop to limit driven

power transistor current

I +/-

• Error lead indicates fault conditions and programs

shutdown time

OUT

12 - 18V

• Output in phase with input

230 mV

• 2.5V, 5V and 15V input logic compatible

CSth

• Also available LEAD-FREE

(typ.)

150 & 150 ns

on/off

Description

The IR2121 is a high speed power MOSFET and

IGBT driver with over-current limiting protection cir-

cuitry. Latch immune CMOS technology enables rug-

gedized monolithic construction. Logic inputs are

compatible with standard CMOS or LSTTL outputs,

down to 2.5V logic. The output driver features a

high pulse current buffer stage designed for mini-

mum cross-conduction. The protection circuitry de-

tects over-current in the driven power transistor and

limits the gate drive voltage. Cycle-by-cycle shut-

down is programmed by an external capacitor which

Package

8-Lead PDIP

directly controls the time interval between detection of the over-current limiting condition and latched shut-

down. The output can be used to drive an N-channel power MOSFET or IGBT in the low side configuration.

Typical Connection

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ꢀ

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ꢀ

ꢁꢁ

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ꢃꢄꢅ

ꢁꢂ

ꢉꢊꢊ

ꢁꢃꢆ

(Refer to Lead

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ꢂ

Assignments for correct

pin configuration). This/

These diagram(s) show

electrical connections

only. Please refer to our

Application Notes and

DesignTips for proper

circuit board layout.

www.irf.com

12 3 4 5 6 7...16

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