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IR340LM12CS05 PDF预览

IR340LM12CS05

更新时间: 2024-11-29 14:51:35
品牌 Logo 应用领域
威世 - VISHAY 快速恢复二极管
页数 文件大小 规格书
4页 52K
描述
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER

IR340LM12CS05 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:WAFER
包装说明:R-XUUC-N1针数:1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.40风险等级:5.58
Is Samacsys:N应用:FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJESD-30 代码:R-XUUC-N1
JESD-609代码:e0元件数量:1
相数:1端子数量:1
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.5 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:TIN LEAD
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IR340LM12CS05 数据手册

 浏览型号IR340LM12CS05的Datasheet PDF文件第2页浏览型号IR340LM12CS05的Datasheet PDF文件第3页浏览型号IR340LM12CS05的Datasheet PDF文件第4页 
Bulletin I0114J 05/00  
IR340LM..CS05CB SERIES  
FAST RECOVERY DIODES  
Junction Size:  
Wafer Size:  
Rectangular 350 x 230 mils  
4"  
VRRM Class:  
1000 to 1200 V  
PassivationProcess:  
Glassivated MOAT  
Reference IR Packaged Part: 60EPF Series  
Major Ratings and Characteristics  
Parameters  
Units  
TestConditions  
VFM  
MaximumForwardVoltage  
1300mV  
TJ = 25°C, IF = 60 A  
VRRM Reverse BreakdownVoltageRange  
1000 to1200V TJ = 25°C, IRRM = 100 µA  
(1)  
(1) Nitrogen flow on die edge.  
Mechanical Characteristics  
NominalBackMetalComposition, Thickness  
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)  
100% Al, (20 µm)  
NominalFrontMetalComposition, Thickness  
ChipDimensions  
350 x 230 mils (8.89x5.84 mm) - see drawing  
100 mm, with std. < 110 > flat  
260 µm  
WaferDiameter  
WaferThickness  
MaximumWidthofSawingLine  
Reject Ink Dot Size  
45 µm  
0.25mmdiameterminimum  
Seedrawing  
InkDotLocation  
RecommendedStorageEnvironment  
Storageinoriginalcontainer, indessicated  
nitrogen,withnocontamination  
Document Number: 93841  
www.vishay.com  
1

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