Datasheet > IR250BG06DCB

IR250BG06DCB

更新时间： 2024-10-01 19:43:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
3页	152K
描述
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

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IR250BG06DCB 数据手册

Bulletin I0200J rev. B 01/01

IR250BG..DCB

PHASE CONTROL THYRISTORS

Junction Size

Square 250 mils

Wafer Size

V_RRM/ V_DRMClass

PassivationProcess

Reference IR Packaged Part

600 to 1200 V

Glassivated MESA

40TPS Series

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

MaximumOn-stateVoltage

1.3V

T_J=25°C, I_T=25A

V_RRM/V_DRMReverseBreakdownVoltage

600to1200V T_J= 25°C, I_RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max.RequiredDCGateCurrenttoTrigger

150mA

2 V

T_J=25°C,anodesupply=6V,resistiveload

Max.RequiredDCGateVoltagetoTrigger

HoldingCurrentRange

5 to 200 mA Anodesupply=6V,resistiveload

I_L

MaximumLatchingCurrent

400mA

Anodesupply=6V,resistiveload

(1) Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition,Thickness

Cr-Ni-Ag(1KA-4KA -6KA)

100%Al,(20µm)

NominalFrontMetalComposition,Thickness

ChipDimensions

250x250mils(seedrawing)

100 mm, with std. <110> flat

370 µm ± 10 µm

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

130µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

www.irf.com

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与IR250BG06DCB相关器件

型号	品牌	获取价格	描述	数据表
IR250BG06DCBPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
IR250BG06DCBPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
IR250BG06DPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER
IR250BG12D	INFINEON	获取价格	Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INC
IR250BG12DCB	INFINEON	获取价格	Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INC
IR250BG12DCB	VISHAY	获取价格	Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INC
IR250BG12DCBPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INC
IR250BG12DPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 39.25A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INC
IR250SG12H	VISHAY	获取价格	Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH WAFER
IR250SG12HCB	ETC	获取价格