Datasheet > IR255SG08HCB

IR255SG08HCB

更新时间： 2024-10-01 19:01:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
3页	126K
描述
Silicon Controlled Rectifier, 800V V(DRM), 800V V(RRM), 1 Element, 4 INCH, WAFER

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IR255SG08HCB 数据手册

Preliminary Data Sheet I0211J 12/99

IR255SG..HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

Square 250 mils

V_RRMClass:

600 to 1200 V

Glassivated MESA

Passivation Process:

Reference IR Packaged Part: n. a.

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

Maximum On-state Voltage

1.25V

T_J=25°C, I_T= 2 5 A

V_DRM/V_RRMDirectandReverse Breakdown Voltage

600 to 1200 V T_J= 25°C, I_DRM/I_RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max.RequiredDCGateCurrent toTrigger

Max. RequiredDCGateVoltagetoTrigger

Holding Current Range

80mA

2 V

T_J=25°C,anodesupply=6V,resistiveload

5 to 100 mA Anodesupply=6V, resistiveload

I_L

Maximum Latching Current

300mA

Anodesupply=6V, resistiveload

(1)Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition,Thickness

Cr -Ni -Ag (1 KA-4 KA -6 KA)

Cr-Ni-Ag(1KA-4KA -6KA)

250x250mils(seedrawing)

100mm,withstd.<110>flat

330µm±10µm

Nominal Front Metal Composition,Thickness

Chip Dimensions

WaferDiameter

Wafer Thickness

Maximum Width of SawingLine

Reject Ink Dot Size

130µm

0.25mmdiameterminimum

Seedrawing

Ink Dot Location

Recommended Storage Environment

Storage in original container, in dessicated

nitrogen, with no contamination

www.irf.com

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