Datasheet > IR250SG12HCBPBF

IR250SG12HCBPBF

更新时间： 2024-10-01 14:34:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
3页	109K
描述
Silicon Controlled Rectifier, 1200V V(RRM), 1 Element, 4 INCH, WAFER

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IR250SG12HCBPBF 数据手册

Bulletin I0210J 12/98

IR250SG12HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

Square 250 mils

V_RRMClass:

1200 V

PassivationProcess:

Glassivated MESA

Reference IR Packaged Part: n. a.

Major Ratings and Characteristics

Parameters

Units

Test Conditions

V_TM

Maximum On-state Voltage

1.3 V

1200 V

100mA

2 V

T_J= 25°C, I_T= 25 A

V_RRMReverse Breakdown Voltage

T_J= 25°C, I_RRM= 100 µA

(1)

I_GT

V_GT

I_H

Max.RequiredDCGateCurrenttoTrigger

Max. Required DC Gate Voltage to Trigger

HoldingCurrentRange

T_J=25°C,anodesupply=6V,resistiveload

T_J=25°C, anodesupply=6V, resistiveload

5 to 200 mA Anode supply = 6 V, resistive load

I_L

Maximum Latching Current

400 mA

Anode supply = 6 V, resistive load

(1)Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition,Thickness

Cr-Ni-Ag(1KA-4KA -6KA)

250x250mils(seedrawing)

100 mm, with std. <110> flat

370 µm ± 10 µm

NominalFrontMetalComposition,Thickness

ChipDimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

130µm

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

www.irf.com

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