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IR2132C PDF预览

IR2132C

更新时间: 2024-11-20 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
26页 241K
描述
MOSFET Driver,

IR2132C 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:, DIE OR CHIPReach Compliance Code:unknown
风险等级:5.88最高工作温度:125 °C
最低工作温度:-40 °C封装等效代码:DIE OR CHIP
电源:15 V认证状态:Not Qualified
子类别:MOSFET Drivers标称供电电压:15 V
温度等级:AUTOMOTIVEBase Number Matches:1

IR2132C 数据手册

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Data Sheet No. PD650009  
IR2130C/IR2132C  
3-PHASE BRIDGE DRIVER DIE IN WAFER FORM  
Features  
Floating channel designed for bootstrap operation  
Over-current shutdown turns off all six drivers  
Independent half-bridge drivers  
Matched propagation delay for all channels  
2.5V logic compatible  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 10 to 20V  
Undervoltage lockout for all channels  
Outputs out of phase with inputs  
Cross-conduction prevention logic  
Description  
The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent  
high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic  
construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-  
referenced operational amplifier provides analog feedback of bridge current via an external current sense  
resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open  
drain ꢀꢁꢂꢃꢄ signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers  
feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are  
matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power  
MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.  
Typical Connection  
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer  
to our Application Notes and DesignTips for proper circuit board layout.  
Note:  
! This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized processes.  
Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with  
a conditional performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and  
assumed conditions, and are provided for illustration purposes only. Customers are encouraged to perform testing in actual  
proposed packaged and use conditions. IR die products are tested using IR-based quality assurance procedures and are  
manufactured using IR’s established processes. Programs for customer-specified testing are available upon request. IR has  
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results will vary. Estimates such  
as those described and set forth in this data sheet for semiconductor die will vary depending on a number of packaging, handling,  
use and other factors. Sold die may not perform on an equivalent basis to standard package products and are therefore offered  
with a limited warranty as described in IR’s applicable standard terms and conditions of sale. All IR die sales are subject to IR’s  
applicablestandardtermsandconditionsofsale,whichareavailableuponrequest.Forcustomersrequiringaparticularparameter  
to be guaranteed, special testing can be carried out or product can be purchased as known good die.  
" Part number shown is for die in wafer. Contact factory for these other options.  
www.irf.com  
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