Data Sheet No. PD650009
IR2130C/IR2132C
3-PHASE BRIDGE DRIVER DIE IN WAFER FORM
Features
• Floating channel designed for bootstrap operation
• Over-current shutdown turns off all six drivers
• Independent half-bridge drivers
• Matched propagation delay for all channels
• 2.5V logic compatible
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for all channels
• Outputs out of phase with inputs
• Cross-conduction prevention logic
Description
The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent
high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic
construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-
referenced operational amplifier provides analog feedback of bridge current via an external current sense
resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open
drain ꢀꢁꢂꢃꢄ signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers
feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power
MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer
to our Application Notes and DesignTips for proper circuit board layout.
Note:
! This IR product is100% tested at wafer level and is manufactured using established, mature and well characterized processes.
Due to restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with
a conditional performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and
assumed conditions, and are provided for illustration purposes only. Customers are encouraged to perform testing in actual
proposed packaged and use conditions. IR die products are tested using IR-based quality assurance procedures and are
manufactured using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results will vary. Estimates such
as those described and set forth in this data sheet for semiconductor die will vary depending on a number of packaging, handling,
use and other factors. Sold die may not perform on an equivalent basis to standard package products and are therefore offered
with a limited warranty as described in IR’s applicable standard terms and conditions of sale. All IR die sales are subject to IR’s
applicablestandardtermsandconditionsofsale,whichareavailableuponrequest.Forcustomersrequiringaparticularparameter
to be guaranteed, special testing can be carried out or product can be purchased as known good die.
" Part number shown is for die in wafer. Contact factory for these other options.
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