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IR2128C

更新时间： 2024-01-08 09:51:29
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
17页 142K
描述
Buffer/Inverter Based MOSFET Driver, CMOS,

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IR2128C 技术参数

是否Rohs认证： 不符合生命周期：End Of Life
包装说明：, DIE OR CHIPReach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.7接口集成电路类型：BUFFER OR INVERTER BASED MOSFET DRIVER
最高工作温度：125 °C最低工作温度：-40 °C
封装等效代码：DIE OR CHIP电源：15 V
认证状态：Not Qualified子类别：MOSFET Drivers
标称供电电压：15 V技术：CMOS
温度等级：AUTOMOTIVEBase Number Matches：1

IR2128C 数据手册

 浏览型号IR2128C的Datasheet PDF文件第1页浏览型号IR2128C的Datasheet PDF文件第3页浏览型号IR2128C的Datasheet PDF文件第4页浏览型号IR2128C的Datasheet PDF文件第5页浏览型号IR2128C的Datasheet PDF文件第6页浏览型号IR2128C的Datasheet PDF文件第7页 
IR2127C/IR2128C/IR21271C  
Description  
The IR2127/IR2128/IR21271(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC  
and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible  
with standard CMOS or LSTTL outputs, down to 3.3V. The protection circuity detects over-current in the driven  
power transistor and terminates the gate drive voltage. An open drain  
signal is provided to indicate that  
FAULT  
an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for  
minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in  
the high side or low side configuration which operates up to 600 volts.  
Absolute Maximum Ratings  
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters  
are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under  
board mounted and still air conditions.  
Symbol  
Definition  
High Side Floating Supply Voltage  
High Side Floating Offset Voltage  
High Side Floating Output Voltage  
Logic Supply Voltage  
Min.  
Max.  
Units  
V
-0.3  
625  
B
S
V
V
B
- 25  
V
B
+ 0.3  
V
V
V - 0.3  
S
V
+ 0.3  
25  
HO  
B
-0.3  
-0.3  
-0.3  
V
CC  
V
IN  
Logic Input Voltage  
V
V
+ 0.3  
+ 0.3  
+ 0.3  
50  
CC  
V
FLT  
FAULT Output Voltage  
CC  
V
CS  
Current Sense Voltage  
V
S
- 0.3  
V
B
dV /dt  
s
Allowable Offset Supply Voltage Transient  
Junction Temperature  
—
—
V/ns  
°C  
T
J
150  
150  
T
Storage Temperature  
-55  
S
Recommended Operating Conditions  
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the  
recommended conditions. The V offset rating is tested with all supplies biased at 15V differential.  
S
Symbol  
Definition  
Min.  
Max.  
Units  
V
High Side Floating Supply Voltage  
(IR2127/IR2128)  
(IR21271)  
V
+ 12  
V
+ 20  
B
S
S
S
V
+ 9  
V
+ 20  
S
V
High Side Floating Offset Voltage  
High Side Floating Output Voltage  
Logic Supply Voltage  
Note 1  
600  
S
V
HO  
V
S
V
B
V
V
CC  
10  
0
20  
V
IN  
Logic Input Voltage  
V
CC  
V
FLT  
FAULT Output Voltage  
0
V
CC  
V
Current Sense Signal Voltage  
Ambient Temperature  
V
V + 5  
S
CS  
S
T
-40  
125  
°C  
A
Note 1: Logic operational for V of -5 to +600V. Logic state held for V of -5V to -V . (Please refer to the Design Tip  
S
S
BS  
DT97-3 for more details).  
2
www.irf.com  
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