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IR20153SPBF PDF预览

IR20153SPBF

更新时间: 2024-02-05 19:42:14
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
15页 220K
描述
HIGH SIDE DRIVER WITH RECHARGE

IR20153SPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOIC包装说明:LEAD FREE, MS-012AA, SOIC-8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.79Is Samacsys:N
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:2
功能数量:1端子数量:8
最高工作温度:150 °C最低工作温度:-55 °C
标称输出峰值电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:5 V标称供电电压:5 V
电源电压1-最大:170 V电源电压1-分钟:3.4 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.9 µs接通时间:2 µs
宽度:3.9 mmBase Number Matches:1

IR20153SPBF 数据手册

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IR20153S & (PbF)  
Electrical Characteristics  
Unless otherwise specified,  
V
CC  
= 5V, V = 7V, V = 0V, IN = 0V, RES = 5V, load R = 50 , C = 6.8nF (see Figure 3).  
BS S  
Unless otherwise noted, these specifications apply for an operating ambient temperature of T =25°C.  
A
Symbol  
Definition  
Min. Typ. Max. Units Test Conditions  
Gate Driver Characteristics cont.  
µ
sec  
t
RES-to-Output Turn-On Propogation Delay  
(50% input level to 10% [t ] output levels)  
-
1.0  
2.0  
res,on  
plh  
Input Characteristics  
V
INH  
High Logic Level Input Threshold  
Low Logic Level Input Threshold  
3
-
40  
3
-
40  
-
-
V
V
V
-
100  
-
1.4  
220  
-
1.4  
220  
INL  
R
High Logic Level Input Resistance  
High Logic Level RES Input Threshold  
Low Logic Level RES Input Threshold  
High Logic Level RES Input Resistance  
k
IN  
V
V
V
V
H_RES  
L_RES  
-
R
RES  
100  
k
Recharge Characteristics  
(see Figure 3a)  
µ
sec  
µ
sec  
V
t
t
Recharge Transistor Turn-On Propogation Delay  
Recharge Transistor Turn-Off Propogation Delay  
Recharge Output Transistor On-State Voltage Drop  
7
-
-
11  
0.3  
-
15  
0.9  
1.2  
V = 5V  
S
on_rech  
off_rech  
V
I
= 1mA, IN = 5V  
S
RECH  
Deadtime Characteristics  
µ
sec  
µ
sec  
DT  
High Side Turn-Off to Recharge gate Turn-On  
Recharge gate Turn-Off to High Side Turn-On0.  
7
0.4  
11  
0.8  
15  
1.5  
HOFF  
DT  
HON  
4
www.irf.com  

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