是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8504.50.80.00 | 风险等级: | 5.6 |
构造: | Epoxy Coated | 型芯材料: | Iron |
直流电阻: | 1.8 Ω | 标称电感 (L): | 5.6 µH |
电感器类型: | GENERAL PURPOSE INDUCTOR | 引线直径: | 0.508 mm |
引线长度: | 36.515 mm | 最高工作温度: | 105 °C |
最低工作温度: | -55 °C | 封装直径: | 3.05 mm |
封装长度: | 6.6 mm | 封装形式: | Axial |
包装方法: | TR | 最小质量因数(标称电感时): | 50 |
最大额定电流: | 0.185 A | 自谐振频率: | 65 MHz |
系列: | IR | 容差: | 10% |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IR-25.6UH+-10%ESE2 | VISHAY |
获取价格 |
General Purpose Inductor, 5.6uH, 10%, Iron-Core, | |
IR-25.6UH+-10%EVE2 | VISHAY |
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General Purpose Inductor, 5.6uH, 10%, Iron-Core, | |
IR-25.6UH+-3%EBE2 | VISHAY |
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General Purpose Inductor, 5.6uH, 3%, Iron-Core, | |
IR-25.6UH+-3%ERE2 | VISHAY |
获取价格 |
General Purpose Inductor, 5.6uH, 3%, Iron-Core, | |
IR250BG06D | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER | |
IR250BG06D | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER | |
IR250BG06DCB | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER | |
IR250BG06DCB | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER | |
IR250BG06DCBPBF | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER | |
IR250BG06DCBPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER |