Datasheet > IPU95R750P7

IPU95R750P7

更新时间： 2023-09-03 20:31:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1400K
描述
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPU95R750P7 数据手册

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice

IPU95R750P7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

950

2.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

3.5

V_DS=V_GS,ꢀI_D=0.22mA

V_DS=950V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=950V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

I_GSS

1000 nA

V_GS=20V,ꢀV_DS=0V

0.64

1.429

0.75

V_GS=10V,ꢀI_D=4.5A,ꢀT_j=25°C

V_GS=10V,ꢀI_D=4.5A,ꢀT_j=150°C

R_DS(on)

R_G

Ω

f=250kHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

712

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=400V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

C_o(tr)

t_d(on)

t_r

182

V_GS=0V,ꢀV_DS=0...400V

Effective output capacitance, time

related²⁾

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0...400V

V_DD=400V,ꢀV_GS=13V,ꢀI_D=4.5A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

Rise time

V_DD=400V,ꢀV_GS=13V,ꢀI_D=4.5A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

V_DD=400V,ꢀV_GS=13V,ꢀI_D=4.5A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

V_DD=400V,ꢀV_GS=13V,ꢀI_D=4.5A,

R_G=10.2Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=760V,ꢀI_D=4.5A,ꢀV_GS=0ꢀtoꢀ10V

Q_gd

Q_g

Gate plateau voltage

V_plateau

4.4

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-01-13

1 2 3 456 7 8...14

中文翻译

下载PDF

与IPU95R750P7相关器件

型号	品牌	描述	获取价格	数据表
IPUG105	LATTICE	DDR2 SDRAM IP Core User's Guide	获取价格
IPUG110	LATTICE	LPDDR3 SDRAM Controller IP Core User's Guide	获取价格
IPUG111	LATTICE	JESD207 IP Core User's Guide	获取价格
IPUG18	LATTICE	PCI IP Core User's Guide	获取价格
IPUG84	LATTICE	RapidIO 2.x LP-Serial Physical Layer Endpoint IP Core User's Guide	获取价格
IPUG92	LATTICE	LPDDR SDRAM Controller IP Core User's Guide	获取价格