Datasheet > IPU95R750P7

IPU95R750P7

更新时间： 2023-09-03 20:31:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1400K
描述
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.

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IPU95R750P7 数据手册

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice

IPU95R750P7

1ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

5.5

T_C=25°C

Continuous drain current¹⁾

I_D

T_C=100°C

Pulsed drain current²⁾

I_D,pulse

E_AS

T_C=25°C

Avalanche energy, single pulse

Avalanche energy, repetitive

I_D=1.1A; V_DD=50V; see table 10

E_AR

0.22

Application (Flyback) relevant

avalanche current, single pulse³⁾

measured with standard leakage

inductance of transformer of 10µH

I_AS

4.0

MOSFET dv/dt ruggedness

Gate source voltage (static)

Gate source voltage (dynamic)

Power dissipation

dv/dt

V_GS

P_tot

T_stg

T_j

100

V/ns V_DS=0...400V

-20

-30

static;

AC (f>1 Hz)

°C

T_C=25°C

Storage temperature

-55

150

Operating junction temperature

Mounting torque

Ncm -

Continuous diode forward current

Diode pulse current²⁾

I_S

6.2

T_C=25°C

I_S,pulse

T_C=25°C

V_DS=0...400V,ꢀI_SD<=2.2A,ꢀT_j=25°Cꢀꢀꢀꢀ

Reverse diode dv/dt⁴⁾

dv/dt

V/ns

see table 8

V_DS=0...400V,ꢀI_SD<=2.2A,ꢀT_j=25°Cꢀꢀꢀꢀ

Maximum diode commutation speed

Insulation withstand voltage

di_F/dt

A/µs

see table 8

V_ISO

n.a.

V_rms,ꢀT_C=25°C,ꢀt=1min

¹⁾Limited by T_j,max. Maximum Duty Cycle D = 0.5

²⁾Pulse width t_plimited by T_j,max

³⁾For further explanation please read AN - CoolMOS^TM700V P7 & 950V P7

⁴⁾Identical low side and high side switch with identical R_G

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2022-01-13

1 234 5 6 7...14

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