Datasheet > IPS825-40B

IPS825-40B

更新时间： 2022-12-21 15:23:51

品牌	Logo	应用领域
IPS		可控硅整流器
页数	文件大小	规格书
4页	216K
描述
silicon controlled rectifiers

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IPS825-40B 数据手册

IPS825-xxB

ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)

IPS825-xxB

Symbol

Test Condition

Unit

Required DC gate current to trigger at 25℃

100

IGT

at - 40℃

at 125℃

MAX

Required DC voltage to trigger

at 25℃

1.5

2.5

1.0

VGT

VGD

(anode supply = 6V, resistive load) at - 40℃

at 125℃

MAX

DC gate voltage not to trigger

0.2

(Tj = 125℃, VDRM = rated value)

IG = 1.2 IGT

MAX

MIN

Holding current

dV/dt

VD = 67% VDRM gate open Tj = 125 ℃

500

V/us

STATIC CHARACTERISTICS

Value

Symbol

Test Conditions

Unit

(MAX)

VTM

ITM = 50A, tp = 380uS

Tj = 25℃

Tj = 125℃

1.6

VD = VDRM

VR = VRRM

IDRM / IRRM

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j – c)

Junction to case for DC

TO-220B

1.0

℃/W

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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