Datasheet > IPSA70R2K0P7SAKMA1

IPSA70R2K0P7SAKMA1

更新时间： 2024-02-06 05:20:52

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
2页	227K
描述
Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IPSA70R2K0P7SAKMA1 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	IN-LINE, R-PSIP-T3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	Factory Lead Time：	18 weeks
风险等级：	1.65	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	700 V
最大漏源导通电阻：	2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-251	JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	5.7 A	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IPSA70R2K0P7SAKMA1 数据手册

浏览型号IPSA70R2K0P7SAKMA1的Datasheet PDF文件第2页

Product brief

700 V CoolMOS™ P7 series

Infineon’s answer for flyback topologies

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the

new 700 V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile

phone chargers or notebook adapters by oﬀering fundamental performance gains

compared to superjunction technologies used today.

Key features

Extremely low FOM R_DS(on)x E_oss

;

›

lower Q_g, E_onand E_oﬀ

Highly performant technology

›

By combining customers’ feedback with over 20 years of superjunction MOSFET

experience, 700 V CoolMOS™ P7 enables best fit for target applications in terms of:

– Low switching losses (E_OSS

)

– Highly eﬀicient

– Excellent thermal behavior

Allowing high speed switching

Integrated protection Zener diode

Optimized V^GS(th)of 3 V with very nar-

row tolerance of 0.5 V

Eﬀiciency and thermals

Ease-of-use

EMI behavior

›

The new CoolMOS™ P7 oﬀers 27 percent to 50 percent lower switching losses (E_OSS),

up to 3.9 percent higher eﬀiciency and impressively up to 16 K lower device temperature

against competition. Compared to previous 650 V CoolMOS™ C6 technology it oﬀers

2.4 percent gain in eﬀiciency and 12 K lower device temperature, measured at a flyback

based charger application, operated at 140 kHz switching speed.

Finely graduated portfolio

›

Switching losses (E_OSS

)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Key benefits

Cost competitive technology

›

△

50%

27%

Up to 2.4 percent eﬀiciency gain

and 12 K lower device temperature

compared to C6 technology

Further eﬀiciency gain at higher

switching speed

Supporting less magnetic size with

lower BOM costs

High ESD ruggedness up to HBM

Class 2 level

›

△

›

100

200

300

400

V^DS[V]

Competitor A

Competitor B

To increase the ESD ruggedness up to HBM Class 2 level, 700 V CoolMOS™ P7 comes with

an integrated Zener diode. This helps to support increased assembly yield, leads to less

production related failures and finally manufacturing cost savings on customer side.

Easy to drive and design-in

Enabler for smaller form factors and

high power density designs

Excellent choice in selecting the best

fitting product

›

Keeping the ease-of-use in mind, the technology has been developed with an excellent

_GS(th)of 3 V and narrow tolerance of 0.5 V. This makes the P7 easy to design-in and

enables the usage of lower gate source voltage, which makes it easier to drive and leads

to less idle losses.

›

Charger

www.infineon.com/700V-p7

中文翻译

下载PDF

与IPSA70R2K0P7SAKMA1相关器件

型号	品牌	描述	获取价格	数据表
IPSA70R600CEAKMA1	INFINEON	Power Field-Effect Transistor, 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se	获取价格
IPSA70R900P7SAKMA1	INFINEON	Power Field-Effect Transistor, 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se	获取价格
IPSA70R950CEAKMA1	INFINEON	Power Field-Effect Transistor, 700V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide S	获取价格
IPSAT	CYNERGY3	Intrinsically Safe Pressure Transducer	获取价格
IPSAT-C0184-5	CYNERGY3	Intrinsically Safe Pressure Transducer	获取价格
IPSAT-G1000-5	CYNERGY3	Intrinsically Safe Pressure Transducer	获取价格

与IPSA70R2K0P7SAKMA1相关文章

深入解析CS8416引脚说明、参数、技术特点
2024-06-03

1
TPA3116D2功放芯片参数详解、引脚说明
2024-06-03

4
移位寄存器74HC165引脚说明、驱动程序示例解读
2024-06-03

2
深入解析AD9833：DDS频率合成器的卓越性能与广泛应用
2024-06-03

2

产品中心

服务支持

精选活动

关于我们

帮助中心

IPSA70R2K0P7SAKMA1

IPSA70R2K0P7SAKMA1 技术参数

IPSA70R2K0P7SAKMA1 数据手册

与IPSA70R2K0P7SAKMA1相关器件

与IPSA70R2K0P7SAKMA1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IPSA70R2K0P7SAKMA1

IPSA70R2K0P7SAKMA1 技术参数

IPSA70R2K0P7SAKMA1 数据手册

与IPSA70R2K0P7SAKMA1相关器件

与IPSA70R2K0P7SAKMA1相关文章

您还可以找

您在本页遇到什么问题？