Datasheet > IPS820-30B

IPS820-30B

更新时间： 2022-12-21 15:23:51

品牌	Logo	应用领域
IPS		可控硅整流器
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描述
silicon controlled rectifiers

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IPS820-30B 数据手册

IP Semiconductor Co., Ltd.

IPS820-xxB

IPS820 series of silicon controlled rectifiers are

specifically designed for medium power switching and

phase control applications.

High current density due to double mesa technology

SIPOS and Glass passivation technology used has

reliable operation up to 125℃ junction temperature.

Low Igt parts available.

IPS820 series are suitable for general purpose

applications, a high gate sensitivity is required.

MAIN FEATURES

Symbol

Value

Unit

IT(RMS)

IT(AV)

TO-220B

VDRM / VRRM

VTM

800

≤ 1.6

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

RMS on–state current (Tc = 100℃, 180º conduction half sine wave)

IT(RMS)

Average on–state current

IT(AV)

℃

(Tc = 100℃, 180º conduction half sine wave)

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

VDRM

VRRM

800

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

Tj = 25℃

VDSM

VRSM

900

One cycle Non Repetitive surge current ( Half Cycle, 50Hz)

ITSM

I²t

200

A²s

A/us

I²t Value for fusing

(tp = 10ms, Half Cycle)

Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)

dI/dt

IGM

Peak gate current

tp = 20us, Tj = 125℃

Tj = 125℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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