Datasheet > IPS825-40B

IPS825-40B

更新时间： 2022-12-21 15:23:51

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IPS		可控硅整流器
页数	文件大小	规格书
4页	216K
描述
silicon controlled rectifiers

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IPS825-40B 数据手册

IP Semiconductor Co., Ltd.

IPS825-xxB

IPS825 series of silicon controlled rectifiers are

specifically designed for medium power switching and

phase control applications.

High current density due to double mesa echnology;

SIPOS and Glass passivation technology used has reliable

operation up to 125℃ junction temperature. Low Igt parts

available.

Typical applications are in rectification (softstart) and

these products are designed to be used with international

recetifier input diodes, switches and output recetifiers

which are available in identical package outlines.

MAIN FEATURES

Symbol

IT(RMS)

Value

Unit

TO-220B

VDRM / VRRM

VTM

800

≤ 1.6

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

RMS on–state current (Tc = 110℃, 180º conduction half sine wave)

Average on–state current (Tc = 110℃, 180º conduction half sine wave)

IT(RMS)

IT(AV)

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

VDRM

VRRM

800

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

Tj = 25℃

VDSM

VRSM

900

One cycle Non Repetitive surge current, 10ms sine pulse, rated VRRM

applied

250

260

ITSM

One cycle Non Repetitive surge current, 10ms sine pulse, no voltage

applied

I²t Value for fusing, 10ms sine pulse, rated VRRM applied

I²t Value for fusing, 10ms sine pulse, no voltage applied

Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)

310

320

100

I²t

A²s

dI/dt

IGM

A/us

Peak gate current

tp = 20us, Tj = 125℃

Tj = 125℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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