Datasheet > IPQC60R017S7

IPQC60R017S7

更新时间： 2023-09-03 20:33:36

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1373K
描述
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.

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数据手册

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IPQC60R017S7 数据手册

600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice

IPQC60R017S7

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea

600

10³

1 µs

500

400

300

200

100

10²

10¹

10 µs

100 µs

10⁰

1 ms

10 ms

10^-1

10^-2

10^-3

100

125

150

10⁰

10¹

10²

10³

T_Cꢀ[°C]

V_DSꢀ[V]

P_tot=f(T_C)

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10⁰

10²

10¹

1 µs

0.5

10 µs

10^-1

0.2

100 µs

0.1

10⁰

0.05

0.02

1 ms

10^-1

10^-2

10^-3

10^-2

0.01

10 ms

single pulse

10^-3

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=80ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJCꢀ=f(t_P);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

1...4 5 678 9 10...14

中文翻译

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