Datasheet > IPQC60R017S7

IPQC60R017S7

更新时间： 2023-09-03 20:33:36

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1373K
描述
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.

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IPQC60R017S7 数据手册

600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice

IPQC60R017S7

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer

evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the

necessary technical support by Infineon

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.0

4.5

V_DS=V_GS,ꢀI_D=1.89mA

V_DS=600V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.015 0.017

0.036

V_GS=12V,ꢀI_D=29A,ꢀT_j=25°C

V_GS=12V,ꢀI_D=29A,ꢀT_j=150°C

R_DS(on)

R_G

0.9

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance

Output capacitance

C_iss

7370

116

V_GS=0V,ꢀV_DS=300V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

395

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Effective output capacitance, time

related²⁾

C_o(tr)

Q_oss

t_d(on)

3505

1051

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Output charge

V_DD=300V,ꢀV_GS=13V,ꢀI_D=29A,

R_G=4.5Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

V_DD=300V,ꢀV_GS=13V,ꢀI_D=29A,

R_G=4.5Ω;ꢀseeꢀtableꢀ9

Rise time

t_r

V_DD=300V,ꢀV_GS=13V,ꢀI_D=29A,

R_G=4.5Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

160

V_DD=300V,ꢀV_GS=13V,ꢀI_D=29A,

R_G=4.5Ω;ꢀseeꢀtableꢀ9

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

V_DD=300V,ꢀI_D=29A,ꢀV_GS=0ꢀtoꢀ12V

Q_gd

Q_g

196

5.4

Gate plateau voltage

V_plateau

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

1 2 3 456 7 8...14

中文翻译

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与IPQC60R017S7相关器件

型号	品牌	获取价格	描述	数据表
IPQC60R017S7A	INFINEON	获取价格	The automotive qualified AEC-Q101, 600 V Cool
IPQC60R040S7	INFINEON	获取价格	The 600 V CoolMOS? S7 SJ MOSFET?family is optimized for low conduction losses and features
IPQC60R040S7A	INFINEON	获取价格	The automotive qualified AEC-Q101, 600 V CoolMOS? S7A SJ MOSFET family is optimized to off
IPQC65R017CFD7A	INFINEON	获取价格	采用 QDPAK 底部冷却 SMD 封装的 17mΩ IPQC65R017CFD7A 属于
IPQC65R040CFD7A	INFINEON	获取价格	The 40m? IPQC65R040CFD7A in QDPAK bottom side cooling SMD package is part of the automotiv
IPQC65R125CFD7A	INFINEON	获取价格	The 125m? IPQC65R125CFD7A in QDPAK bottom side cooling SMD package is part of the automoti
IPR1-05-D	SAMTEC	获取价格	Rectangular Power Connector, 10 Contact(s), ROHS COMPLIANT
IPR1-15-D	SAMTEC	获取价格	Rectangular Power Connector, 30 Contact(s), ROHS COMPLIANT
IPR1FAD2	ETC	获取价格	Pushbutton switches for harsh environments -
IPR1FAD2L0G	ETC	获取价格	Pushbutton switches for harsh environments -

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