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IPC50N04S5L5R5ATMA1 PDF预览

IPC50N04S5L5R5ATMA1

更新时间: 2024-11-18 15:46:19
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 414K
描述
Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-33, 8 PIN

IPC50N04S5L5R5ATMA1 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:1.69
Is Samacsys:N雪崩能效等级(Eas):30 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0079 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):200 A参考标准:AEC-Q101
表面贴装:YES端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPC50N04S5L5R5ATMA1 数据手册

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IPC50N04S5L-5R5  
OptiMOS-5 Power-Transistor  
Product Summary  
VDS  
40  
5.5  
50  
V
RDS(on),max  
ID  
mW  
A
Features  
PG-TDSON-8-33  
• OptiMOS™ - power MOSFET for automotive applications  
• N-channel - Enhancement mode - Logic Level  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
1
1
Type  
Package  
Marking  
IPC50N04S5L-5R5  
PG-TDSON-8-33 5N04L5R5  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100°C, VGS=10V2)  
50  
A
42  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25°C  
200  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=25A  
30  
50  
mJ  
A
I AS  
-
VGS  
-
±16  
V
Ptot  
T C=25°C  
Power dissipation  
42  
W
°C  
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
Rev. 1.2  
page 1  
2016-12-06  

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