INC6001AC1 PDF预览

INC6001AC1

更新时间: 2025-07-28 05:39:19
品牌 Logo 应用领域
谏早电子 - ISAHAYA /
页数 文件大小 规格书
4页 156K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type)

INC6001AC1 数据手册

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〈SMALL-SIGNAL TRANSISTOR〉  
TENTATIVE  
INC6001AC1  
This is not a final specification.  
FOR LOW FREQUENCY AMPLIFY APPLICATION  
SILICON NPN EPITAXIAL TYPE (mini type)  
Some parameters are subject to change.  
DESCRIPTION  
OUTLINE DRAWING  
Unit:mm  
INC6001AC1 is a super mini package resin sealed  
silicon NPN epitaxial transistor,  
It is designed for low frequency voltage application.  
.
2.5  
1.5 0.5  
0.5  
FEATURE  
●Super mini package for easy mounting  
●Small collector to emitter saturation voltage VCE(sat)=0.5V  
●High collector current IC=1A  
●High voltage VCEO=100V  
APPLICATION  
For DC/DC converter , power supply etc.  
JEITA:SC-59  
TERMINAL CONNECTER  
①:BASE  
MAXIMUM RATINGS(Ta=25℃)  
Symbol  
VCBO  
VEBO  
VCEO  
IC  
Parameter  
Ratings  
Unit  
V
②:EMITTER  
Collector to Base voltage  
Emitter to Base voltage  
Collector to Emitter voltage  
Collector current  
120  
③:COLLECTOR  
6
100  
V
V
1
A
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
200  
mW  
Tj  
+150  
-55~+150  
Tstg  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Parameter  
Symbol  
Test conditions  
Unit  
Min  
120  
6
Typ  
-
Max  
-
C to B break down voltage  
E to B break down voltage  
C to E break down voltage  
Collector cut off current  
Emitter cut off current  
V(BR)CBO  
V(BR)EBO  
V(BR)CEO  
ICBO  
I C=10μA , I E=0  
I E=10μA , I C=0  
I C=1mA ,R BE=∞  
V
-
-
V
100  
-
-
-
V
V CB=120V, I E=0mA  
V EB=6V, I C=0mA  
-
500  
500  
300  
0.5  
-
nA  
nA  
IEBO  
-
-
DC forward current gain  
C to E Saturation Voltage  
Gain bandwidth product  
Collector output capacitance  
hFE  
V
CE=2V, I C=150mA  
I C=500mA ,IB=50mA  
CE=10V, I E=-50mA  
V CB=10V, I E=0mA,f=1MHz  
100  
-
-
VCE(sat)  
fT  
-
V
V
-
270  
5
MHz  
pF  
Cob  
-
-
ISAHAYA ELECTRONICS CORPORATION  

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