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INA821IDRGT PDF预览

INA821IDRGT

更新时间: 2023-09-03 20:30:33
品牌 Logo 应用领域
德州仪器 - TI 放大器仪表仪表放大器
页数 文件大小 规格书
49页 1849K
描述
高带宽 (4.7MHz)、低噪声 (7nV/√Hz)、精密 (35μV)、低功耗仪表放大器 | DRG | 8 | -40 to 125

INA821IDRGT 数据手册

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INA821  
www.ti.com.cn  
ZHCSIM8C AUGUST 2018REVISED JULY 2019  
7 Specifications  
7.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
–20  
MAX  
UNIT  
Supply voltage  
20  
40  
V
Voltage  
–40  
Signal input pins  
REF pin  
V
V
–20  
20  
Signal output pins  
(-Vs) - 0.5  
(+Vs) + 0.5  
Output short-circuit(2)  
Continuous  
Operating Temperature, TA  
Junction Temperature, TJ  
Storage Temperature, Tstg  
–50  
150  
175  
150  
°C  
–65  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended  
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) Short-circuit to VS / 2.  
7.2 ESD Ratings  
VALUE  
±1500  
±750  
UNIT  
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)  
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)  
V(ESD)  
Electrostatic discharge  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
7.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.5  
MAX  
36  
UNIT  
Single-supply  
Supply voltage VS  
V
Dual-supply  
±2.25  
–40  
±18  
125  
Specified temperature  
Specified temperature  
°C  
7.4 Thermal Information  
INA821  
DGK (VSSOP)  
THERMAL METRIC(1)  
D (SOIC)  
UNIT  
8 PINS  
119.6  
66.3  
8 PINS  
215.4  
66.3  
RθJA  
Junction-to-ambient thermal resistance  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
RθJC(top)  
RθJB  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
61.9  
97.8  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
20.5  
10.5  
ψJB  
61.4  
96.1  
RθJC(bot)  
N/A  
N/A  
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application  
report.  
Copyright © 2018–2019, Texas Instruments Incorporated  
5

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