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INA199A1DCKT PDF预览

INA199A1DCKT

更新时间: 2024-11-25 05:39:19
品牌 Logo 应用领域
德州仪器 - TI 电源电路电源管理电路监视器光电二极管PC
页数 文件大小 规格书
22页 797K
描述
Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series CURRENT SHUNT MONITOR

INA199A1DCKT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SC-70, 6 PIN针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:1.61Samacsys Confidence:
Samacsys Status:ReleasedSamacsys PartID:282827
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:OtherSamacsys Footprint Name:SOT65P210X110-6N
Samacsys Released Date:2017-01-12 12:59:53Is Samacsys:N
可调阈值:NO模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:R-PDSO-G6JESD-609代码:e4
长度:2 mm湿度敏感等级:2
信道数量:1功能数量:1
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP6,.08
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
座面最大高度:0.8 mm最大供电电流 (Isup):5 mA
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

INA199A1DCKT 数据手册

 浏览型号INA199A1DCKT的Datasheet PDF文件第2页浏览型号INA199A1DCKT的Datasheet PDF文件第3页浏览型号INA199A1DCKT的Datasheet PDF文件第4页浏览型号INA199A1DCKT的Datasheet PDF文件第5页浏览型号INA199A1DCKT的Datasheet PDF文件第6页浏览型号INA199A1DCKT的Datasheet PDF文件第7页 
QFN  
Package  
SC70  
Package  
INA199A1  
INA199A2  
INA199A3  
www.ti.com  
SBOS469B MAY 2009REVISED FEBRUARY 2010  
Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series  
CURRENT SHUNT MONITOR  
Check for Samples: INA199A1, INA199A2, INA199A3  
1
FEATURES  
DESCRIPTION  
2
WIDE COMMON-MODE RANGE: –0.3V to 26V  
The INA199Ax series of voltage output current shunt  
monitors can sense drops across shunts at  
common-mode voltages from –0.3V to 26V,  
independent of the supply voltage. Three fixed gains  
are available: 50V/V, 100V/V, and 200V/V. The low  
offset of the Zerø-Drift architecture enables current  
sensing with maximum drops across the shunt as low  
as 10mV full-scale.  
OFFSET VOLTAGE: ±150mV (Max)  
(Enables shunt drops of 10mV full-scale)  
ACCURACY  
±1.5% Gain Error (Max over temperature)  
0.5mV/°C Offset Drift (Max)  
10ppm/°C Gain Drift (Max)  
These devices operate from a single +2.7V to +26V  
power supply, drawing a maximum of 100mA of  
supply current. All versions are specified from –40°C  
to +105°C, and offered in both SC70 and thin  
QFN-10 packages.  
CHOICE OF GAINS:  
INA199A1: 50V/V  
INA199A2: 100V/V  
INA199A3: 200V/V  
QUIESCENT CURRENT: 100mA (max)  
PRODUCT FAMILY TABLE  
PACKAGES: SC70, THIN QFN-10  
PRODUCT  
INA199A1  
INA199A2  
INA199A3  
GAIN  
R3 AND R4  
R1 AND R2  
1M  
50  
20kΩ  
APPLICATIONS  
100  
200  
10kΩ  
1MΩ  
NOTEBOOK COMPUTERS  
CELL PHONES  
TELECOM EQUIPMENT  
POWER MANAGEMENT  
BATTERY CHARGERS  
WELDING EQUIPMENT  
5kΩ  
1MΩ  
RSHUNT  
Supply  
Load  
Reference  
Voltage  
Output  
INA199Ax  
OUT  
REF  
R1  
R3  
IN-  
GND  
+2.7V to +26V  
IN+  
V+  
R2  
R4  
CBYPASS  
0.01mF  
to  
0.1mF  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009–2010, Texas Instruments Incorporated  

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