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IN74HCT126A PDF预览

IN74HCT126A

更新时间: 2024-02-16 00:01:01
品牌 Logo 应用领域
IKSEMICON
页数 文件大小 规格书
6页 221K
描述
Quad 3-State Noninverting Buffers High-Performance Silicon-Gate CMOS

IN74HCT126A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.79
Base Number Matches:1

IN74HCT126A 数据手册

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IN74HCT126A  
AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)  
Guaranteed Limit  
85°C 125°C  
Symbol  
Parameter  
Unit  
25 °C  
to  
-55°C  
tPLH, tPHL Maximum Propagation Delay, Input A to  
Output Y (Figures 1 and 3)  
23  
32  
22  
12  
30  
38  
28  
15  
35  
48  
34  
18  
ns  
ns  
ns  
ns  
tPLZ, tPHZ Maximum Propagation Delay, Output Enable toY  
(Figures 2 and 4)  
tPZL, tPZH Maximum Propagation Delay, Output Enable toY  
(Figures 2 and 4)  
tTLH, tTHL Maximum Output Transition Time, Any Output  
(Figures 1 and 3)  
CIN  
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
COUT  
Maximum Three-State Output Capacitance  
(Output in High-Impedance State)  
Power Dissipation Capacitance (Per Buffer)  
Typical @25°C,VCC=5.0 V  
CPD  
Used to determine the no-load dynamic power  
consumption:  
55  
pF  
PD=CPDVCC2f+ICCVCC  
Figure 1. Switching Waveforms  
Figure 2. Switching Waveforms  
Rev. 00  

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